PHC2300 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: PHC2300
Тип транзистора: MOSFET
Полярность: NP
Pd ⓘ - Максимальная рассеиваемая мощность: 1.6 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 300 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 0.34 A
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 8 Ohm
Тип корпуса: SO8
Аналог (замена) для PHC2300
PHC2300 Datasheet (PDF)
phc2300 2.pdf

DISCRETE SEMICONDUCTORSDATA SHEETPHC2300Complementary enhancementmode MOS transistors1997 Oct 24Product specificationSupersedes data of 1997 Jun 19File under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationComplementary enhancement modePHC2300MOS transistorsFEATURES PINNING - SOT96-1 (SO8) High-speed switchingPIN SYMBOL DESCRIPTION
phc2300.pdf

PHC2300Complementary enhancement mode MOS transistorsRev. 05 24 February 2011 Product data sheet1. Product profile1.1 General descriptionOne N-channel and one P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Features and ben
Другие MOSFET... PHB29N08T , PHB32N06LT , PHB33NQ20T , PHB45NQ10T , PHB45NQ15T , PHB47NQ10T , PHB66NQ03LT , PHC21025 , IRFP250 , PHD101NQ03LT , PHD20N06T , PHD38N02LT , PHD71NQ03LT , PHD97NQ03LT , PHD9NQ20T , PHK04P02T , PHK12NQ03LT .
History: NCEAP4045AGU | 2N06L07P | AT10N60S | AFN9971 | DMN10H170SFDE | IXTM4N95 | HM70N78
History: NCEAP4045AGU | 2N06L07P | AT10N60S | AFN9971 | DMN10H170SFDE | IXTM4N95 | HM70N78



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