All MOSFET. PHC2300 Datasheet

 

PHC2300 Datasheet and Replacement


   Type Designator: PHC2300
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id| ⓘ - Maximum Drain Current: 0.34 A
   Qg ⓘ - Total Gate Charge: 2.097 nC
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
   Package: SO8
 

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PHC2300 Datasheet (PDF)

 ..1. Size:119K  philips
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PHC2300

DISCRETE SEMICONDUCTORSDATA SHEETPHC2300Complementary enhancementmode MOS transistors1997 Oct 24Product specificationSupersedes data of 1997 Jun 19File under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationComplementary enhancement modePHC2300MOS transistorsFEATURES PINNING - SOT96-1 (SO8) High-speed switchingPIN SYMBOL DESCRIPTION

 ..2. Size:929K  nxp
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PHC2300

PHC2300Complementary enhancement mode MOS transistorsRev. 05 24 February 2011 Product data sheet1. Product profile1.1 General descriptionOne N-channel and one P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Features and ben

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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