PHC2300
MOSFET. Datasheet pdf. Equivalent
Type Designator: PHC2300
Type of Transistor: MOSFET
Type of Control Channel: NP
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.6
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 300
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 0.34
A
Qgⓘ - Total Gate Charge: 2.097
nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 8
Ohm
Package:
SO8
PHC2300
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PHC2300
Datasheet (PDF)
..1. Size:119K philips
phc2300 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETPHC2300Complementary enhancementmode MOS transistors1997 Oct 24Product specificationSupersedes data of 1997 Jun 19File under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationComplementary enhancement modePHC2300MOS transistorsFEATURES PINNING - SOT96-1 (SO8) High-speed switchingPIN SYMBOL DESCRIPTION
..2. Size:929K nxp
phc2300.pdf
PHC2300Complementary enhancement mode MOS transistorsRev. 05 24 February 2011 Product data sheet1. Product profile1.1 General descriptionOne N-channel and one P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Features and ben
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