IPB027N10N3G - аналоги, даташиты, параметры транзистора

IPB027N10N3G Datasheet (PDF)

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IPB027N10N3 G 3 Power-TransistorProduct SummaryFeaturesV 1 D Q ' 381>>5?B=1

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Isc N-Channel MOSFET Transistor IPB027N10N3FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

4.1. Size:1134K infineon
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MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOS 5 Power-Transistor, 100 VIPB027N10N5Data SheetRev. 2.1FinalPower Management & MultimarketOptiMOS 5 Power-Transistor, 100 VIPB027N10N5DPAK1 DescriptionFeatures Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-resista

4.2. Size:258K inchange semiconductor
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Isc N-Channel MOSFET Transistor IPB027N10N5FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

Другие MOSFET... IPB020N04NG , IPB020NE7N3G , IPB021N06N3G , IPB022N04LG , IPB023N04NG , IPB023N06N3G , IPB025N08N3G , IPB025N10N3G , IRFP260N , IPB029N06N3G , IPB030N08N3G , IPB031NE7N3G , IPB034N03LG , IPB034N06L3G , IPB034N06N3G , IPB035N08N3G , IPB036N12N3G .