IPB027N10N3G Datasheet. Specs and Replacement
Type Designator: IPB027N10N3G 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 58 nS
Cossⓘ - Output Capacitance: 1940 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0027 Ohm
Package: TO263
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IPB027N10N3G substitution
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IPB027N10N3G datasheet
ipb027n10n3g.pdf
IPB027N10N3 G 3 Power-Transistor Product Summary Features V 1 D Q ' 381>>5?B=1... See More ⇒
ipb027n10n3.pdf
Isc N-Channel MOSFET Transistor IPB027N10N3 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V... See More ⇒
ipb027n10n5.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOS 5 Power-Transistor, 100 V IPB027N10N5 Data Sheet Rev. 2.1 Final Power Management & Multimarket OptiMOS 5 Power-Transistor, 100 V IPB027N10N5 D PAK 1 Description Features Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM) DS(on) Very low on-resista... See More ⇒
ipb027n10n5.pdf
Isc N-Channel MOSFET Transistor IPB027N10N5 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V... See More ⇒
Detailed specifications: IPB020N04NG, IPB020NE7N3G, IPB021N06N3G, IPB022N04LG, IPB023N04NG, IPB023N06N3G, IPB025N08N3G, IPB025N10N3G, IRLZ44N, IPB029N06N3G, IPB030N08N3G, IPB031NE7N3G, IPB034N03LG, IPB034N06L3G, IPB034N06N3G, IPB035N08N3G, IPB036N12N3G
Keywords - IPB027N10N3G MOSFET specs
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