IPB027N10N3G PDF and Equivalents Search

 

IPB027N10N3G Specs and Replacement


   Type Designator: IPB027N10N3G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 58 nS
   Cossⓘ - Output Capacitance: 1940 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0027 Ohm
   Package: TO263
 

 IPB027N10N3G substitution

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IPB027N10N3G datasheet

 ..1. Size:531K  infineon
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IPB027N10N3G

IPB027N10N3 G 3 Power-Transistor Product Summary Features V 1 D Q ' 381>>5?B=1... See More ⇒

 3.1. Size:258K  inchange semiconductor
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IPB027N10N3G

Isc N-Channel MOSFET Transistor IPB027N10N3 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V... See More ⇒

 4.1. Size:1134K  infineon
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IPB027N10N3G

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOS 5 Power-Transistor, 100 V IPB027N10N5 Data Sheet Rev. 2.1 Final Power Management & Multimarket OptiMOS 5 Power-Transistor, 100 V IPB027N10N5 D PAK 1 Description Features Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM) DS(on) Very low on-resista... See More ⇒

 4.2. Size:258K  inchange semiconductor
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IPB027N10N3G

Isc N-Channel MOSFET Transistor IPB027N10N5 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V... See More ⇒

Detailed specifications: IPB020N04NG , IPB020NE7N3G , IPB021N06N3G , IPB022N04LG , IPB023N04NG , IPB023N06N3G , IPB025N08N3G , IPB025N10N3G , IRLZ44N , IPB029N06N3G , IPB030N08N3G , IPB031NE7N3G , IPB034N03LG , IPB034N06L3G , IPB034N06N3G , IPB035N08N3G , IPB036N12N3G .

Keywords - IPB027N10N3G MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 


 
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