IPD78CN10NG - аналоги, даташиты, параметры транзистора

IPD78CN10NG Datasheet (PDF)

..1. Size:1028K infineon
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IPB79CN10N G IPD78CN10N GIPI80CN10N G IPP80CN10N G OptiMOS2 Power-TransistorProduct Summary FeaturesVDS 100 V N-channel, normal levelRDS(on),max (TO252) 78 mW Excellent gate charge x R product (FOM)DS(on)ID 13 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1)

4.1. Size:705K infineon
ipb80cn10n ipd78cn10n ipi80cn10n ipp80cn10n ipu78cn10n.pdf pdf_icon

IPB80CN10N G IPD78CN10N GIPI80CN10N G IPP80CN10N G IPU78CN10N GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 100 VDS N-channel, normal levelR 78mDS(on),max (TO252) Excellent gate charge x R product (FOM)DS(on)I 13 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified accordi

4.2. Size:534K infineon
ipb79cn10n-g ipd78cn10n-g ipi80cn10n-g ipp80cn10n-g.pdf pdf_icon

IPB79CN10N G IPD78CN10N GIPI80CN10N G IPP80CN10N G OptiMOS2 Power-TransistorProduct SummaryFeaturesV 100 VDS N-channel, normal levelR 78mDS(on),max (TO252) Excellent gate charge x R product (FOM)DS(on)I 13 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC

4.3. Size:847K cn vbsemi
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IPD78CN10Nwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ.) 100 % UIS tested0.055 at VGS = 10 V 250.057 at VGS = 4.5 V 100 25 21nC0.070 at VGS = 2.5 V 18APPLICATIONS Primary side switchDTO-252GG D SSN-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TA = 25 C, unl