All MOSFET. IPD78CN10NG Datasheet

 

IPD78CN10NG MOSFET. Datasheet pdf. Equivalent

Type Designator: IPD78CN10NG

Marking Code: 78CN10N

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 31 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 13 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 8 nC

Rise Time (tr): 4 nS

Drain-Source Capacitance (Cd): 76 pF

Maximum Drain-Source On-State Resistance (Rds): 0.078 Ohm

Package: TO252

IPD78CN10NG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPD78CN10NG Datasheet (PDF)

4.1. ipb79cn10n-g ipd78cn10n-g ipi80cn10n-g ipp80cn10n-g.pdf Size:534K _infineon

IPD78CN10NG
IPD78CN10NG

IPB79CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G OptiMOS™2 Power-Transistor Product Summary Features V 100 V DS • N-channel, normal level R 78 mΩ DS(on),max (TO252) • Excellent gate charge x R product (FOM) DS(on) I 13 A D • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC

4.2. ipb80cn10n ipd78cn10n ipi80cn10n ipp80cn10n ipu78cn10n.pdf Size:705K _infineon

IPD78CN10NG
IPD78CN10NG

IPB80CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G IPU78CN10N G OptiMOS®2 Power-Transistor Product Summary Features V 100 V DS • N-channel, normal level R 78 mΩ DS(on),max (TO252) • Excellent gate charge x R product (FOM) DS(on) I 13 A D • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified accordi

 

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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