TK40A10N1 - аналоги, параметры транзистора - Справочник транзисторов

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TK40A10N1 MOSFETs Silicon N-channel MOS (U-MOS -H) TK40A10N1 TK40A10N1 TK40A10N1 TK40A10N1 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 6.8 m (typ.) (VGS = 10 V) (2) Low leakage current IDSS = 10 A (max) (VDS = 100 V) (3) Enha

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INCHANGE Semiconductor Isc N-Channel MOSFET Transistor TK40A10N1 ITK40A10N1 FEATURES Low drain-source on-resistance RDS(ON) = 8.2m (VGS = 10 V) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.5mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXI

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TK40A10J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOS ) TK40A10J1 Switching Regulator Applications Unit mm Small gate charge Qg = 76nC (typ.) Low drain-source ON-resistance RDS (ON) = 11.5 m (typ.) High forward transfer admittance Yfs = 90 S Low leakage current IDSS = 10 A (max) (VDS = 100 V) Enhancement m

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TK40A10K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS ) TK40A10K3 Switching Regulator Application Unit mm Low drain-source ON resistance RDS (ON) = 11.5 m (typ.) High forward transfer admittance Yfs = 80 S Low leakage current IDSS = 10 A (max) (VDS = 100 V) Enhancement-mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute M