2SJ181L - параметры транзистора MOSFET, его аналоги, datasheet

2SJ181L Datasheet (PDF)

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Preliminary Datasheet R07DS0395EJ03002SJ181(L), 2SJ181(S) (Previous: REJ03G0848-0200)Rev.3.00Silicon P Channel MOS FET May 16, 2011Description High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PR

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2SJ181(L), 2SJ181(S) Silicon P Channel MOS FET REJ03G0848-0200 (Previous: ADE-208-1183) Rev.2.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004ZD-A RENESAS Packa

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SMD Type MOSFETP-Channel MOSFET2SJ181STO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features4 VDS (V) =-600V ID =-0.5 A (VGS =-10V)0.127+0.10.80-0.1max RDS(ON) 25 (VGS =-10V)D High speed switchingG Low drive current+ 0.11 Gate2.3 0.60- 0.1+0.152 Drain4 .60 -0.153 Source4 DrainS

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