2SJ181L MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SJ181L
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 20 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Drain Current |Id|: 0.5 A
Maximum Drain-Source On-State Resistance (Rds): 15 Ohm
Package: DPAK
2SJ181L Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SJ181L Datasheet (PDF)
1.1. r07ds0395ej 2sj181ls.pdf 
Size:103K _renesas
Preliminary Datasheet R07DS0395EJ0300 2SJ181(L), 2SJ181(S) (Previous: REJ03G0848-0200) Rev.3.00 Silicon P Channel MOS FET May 16, 2011 Description High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004ZD-A RE
4.1. 2sj181.pdf Size:87K _renesas
2SJ181(L), 2SJ181(S) Silicon P Channel MOS FET REJ03G0848-0200 (Previous: ADE-208-1183) Rev.2.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004ZD-A RENESAS Package code: PRSS
4.2. 2sj181s.pdf Size:1211K _kexin
SMD Type MOSFET P-Channel MOSFET 2SJ181S TO-252 Unit: mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 ■ Features 4 ● VDS (V) =-600V ● ID =-0.5 A (VGS =-10V) 0.127 +0.1 0.80-0.1 max ● RDS(ON) ＜ 25Ω (VGS =-10V) D ● High speed switching G ● Low drive current + 0.1 1 Gate 2.3 0.60- 0.1 +0.15 2 Drain 4 .60 -0.15 3 Source 4 Drain S
Datasheet: NTF5P03T3 , NTF6P02 , NTGD1100L , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , IRF540N , NTGS3441 , NTGS3443 , NTGS3446 , NTGS3455 , NTGS4111P , NTGS4141N , NTGS5120P , NTHC5513 .
