2SJ181L PDF Specs and Replacement
Type Designator: 2SJ181L
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Id| ⓘ - Maximum Drain Current: 0.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 55 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 25 Ohm
Package: DPAK
2SJ181L substitution
2SJ181L PDF Specs
r07ds0395ej 2sj181ls.pdf
Preliminary Datasheet R07DS0395EJ0300 2SJ181(L), 2SJ181(S) (Previous REJ03G0848-0200) Rev.3.00 Silicon P Channel MOS FET May 16, 2011 Description High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code PR... See More ⇒
2sj181.pdf
2SJ181(L), 2SJ181(S) Silicon P Channel MOS FET REJ03G0848-0200 (Previous ADE-208-1183) Rev.2.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code PRSS0004ZD-A RENESAS Packa... See More ⇒
2sj181s.pdf
SMD Type MOSFET P-Channel MOSFET 2SJ181S TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features 4 VDS (V) =-600V ID =-0.5 A (VGS =-10V) 0.127 +0.1 0.80-0.1 max RDS(ON) 25 (VGS =-10V) D High speed switching G Low drive current + 0.1 1 Gate 2.3 0.60- 0.1 +0.15 2 Drain 4 .60 -0.15 3 Source 4 Drain S ... See More ⇒
Detailed specifications: 2SK4059MFV , 2SK4059TK , 2SK4059TV , 2SK711 , 2SK879 , 2SK880Y , TTK101MFV , TTK101TK , IRF640N , 2SJ181S , 2SJ186 , 2SJ216 , 2SJ217 , 2SJ221 , 2SJ222 , 2SJ247 , 2SJ248 .
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