2SJ181L Datasheet. Specs and Replacement

Type Designator: 2SJ181L  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V

|Id| ⓘ - Maximum Drain Current: 0.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 25 Ohm

Package: DPAK

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2SJ181L datasheet

 0.1. Size:103K  renesas
 r07ds0395ej 2sj181ls.pdf pdf_icon

2SJ181L

Preliminary Datasheet R07DS0395EJ0300 2SJ181(L), 2SJ181(S) (Previous REJ03G0848-0200) Rev.3.00 Silicon P Channel MOS FET May 16, 2011 Description High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code PR... See More ⇒

 8.1. Size:87K  renesas
 2sj181.pdf pdf_icon

2SJ181L

2SJ181(L), 2SJ181(S) Silicon P Channel MOS FET REJ03G0848-0200 (Previous ADE-208-1183) Rev.2.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code PRSS0004ZD-A RENESAS Packa... See More ⇒

 8.2. Size:1211K  kexin
 2sj181s.pdf pdf_icon

2SJ181L

SMD Type MOSFET P-Channel MOSFET 2SJ181S TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features 4 VDS (V) =-600V ID =-0.5 A (VGS =-10V) 0.127 +0.1 0.80-0.1 max RDS(ON) 25 (VGS =-10V) D High speed switching G Low drive current + 0.1 1 Gate 2.3 0.60- 0.1 +0.15 2 Drain 4 .60 -0.15 3 Source 4 Drain S ... See More ⇒

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Detailed specifications: 2SK4059MFV, 2SK4059TK, 2SK4059TV, 2SK711, 2SK879, 2SK880Y, TTK101MFV, TTK101TK, IRFP260N, 2SJ181S, 2SJ186, 2SJ216, 2SJ217, 2SJ221, 2SJ222, 2SJ247, 2SJ248

Keywords - 2SJ181L MOSFET specs

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