FTK4822 - описание и поиск аналогов

 ..1. Size:509K  first silicon
 ftk4822.pdf 

SEMICONDUCTOR FTK4822 TECHNICAL DATA Dual N-Channel MOSFET DESCRIPTION The FTK4822 uses advanced trench N-channel N-channel te chnology to provide excellent RDS(ON) and low gate charge. Schematic diagram This device is suitable for use as a load switch D 2 D 2 D 1 D 1 or in PWM applications. 6 5 8 7 4822 1 2 4 3 FEATURES S 2 G 2 G 1 S 1 Marking and pin Assignment VD

 8.1. Size:312K  first silicon
 ftk4828f.pdf 

SEMICONDUCTOR FTK4828F TECHNICAL DATA A C N-Channel MOSFET H G DIM MILLIMETERS A 4.70 MAX _ B 2.50 0.20 DESCRIPTION C 1.70 MAX D D D 0.45 0.15/-0.10 K E 4.25 MAX _ The FTK4828F uses advancd trench technology to provide excellent F F F 1.50 0.10 G 0.40 TYP H 1.7 MAX RDS(ON) and low gate charge. J 0.7 MIN K 0.5 0.15/-0.10 1 2 3 This device is suitable for use as a lo

 8.2. Size:323K  first silicon
 ftk4828d.pdf 

SEMICONDUCTOR FTK4828D TECHNICAL DATA N-Channel MOSFET A I DESCRIPTION C J The FTK4828D uses advancd trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch DIM MILLIMETERS or in PWM applications. A 6 50 0 2 B 5 60 0 2 C 5 20 0 2 D 1 50 0 2 E 2 70 0 2 F 2 30 0 1 H H 1 00 MAX I 2 30 0 2

 8.3. Size:583K  first silicon
 ftk4828.pdf 

SEMICONDUCTOR FTK4828 TECHNICAL DATA Dual N-Channel MOSFET DESCRIPTION The FTK4828 uses advanced trench N-channel N-channel te chnology to provide excellent RDS(ON) and low gate charge. Schematic diagram This device is suitable for use as a load switch D 2 D 2 D 1 D 1 or in PWM applications. 6 5 8 7 Q4828 1 2 4 3 FEATURES S 2 G 2 G 1 S 1 Marking and pin Assignment V