FTK4822 - параметры транзистора MOSFET, его аналоги, datasheet

FTK4822 Datasheet (PDF)

..1. Size:509K first silicon
ftk4822.pdf pdf_icon

SEMICONDUCTOR FTK4822TECHNICAL DATADual N-Channel MOSFET DESCRIPTIONThe FTK4822 uses advanced trench N-channel N-channel te chnology to provide excellent RDS(ON) and low gate charge. Schematic diagram This device is suitable for use as a load switch D 2 D 2 D 1 D 1or in PWM applications. 6 58 748221 2 43 FEATURESS 2 G 2 G 1S 1 Marking and pin AssignmentVD

8.1. Size:312K first silicon
ftk4828f.pdf pdf_icon

SEMICONDUCTORFTK4828FTECHNICAL DATAACN-Channel MOSFET HGDIM MILLIMETERSA 4.70 MAX_B 2.50 0.20DESCRIPTIONC 1.70 MAXDDD 0.45 0.15/-0.10KE 4.25 MAX_The FTK4828F uses advancd trench technology to provide excellent F F F 1.50 0.10G 0.40 TYPH 1.7 MAXRDS(ON) and low gate charge. J 0.7 MINK 0.5 0.15/-0.101 2 3 This device is suitable for use as a lo

8.2. Size:323K first silicon
ftk4828d.pdf pdf_icon

SEMICONDUCTORFTK4828DTECHNICAL DATAN-Channel MOSFET AIDESCRIPTIONCJThe FTK4828D uses advancd trench technology to provide excellentRDS(ON) and low gate charge. This device is suitable for use as a load switch DIM MILLIMETERS or in PWM applications. A 6 50 0 2 B 5 60 0 2C 5 20 0 2D 1 50 0 2E 2 70 0 2F 2 30 0 1HH 1 00 MAXI 2 30 0 2

8.3. Size:583K first silicon
ftk4828.pdf pdf_icon

SEMICONDUCTOR FTK4828TECHNICAL DATADual N-Channel MOSFET DESCRIPTIONThe FTK4828 uses advanced trench N-channel N-channel te chnology to provide excellent RDS(ON) and low gate charge. Schematic diagram This device is suitable for use as a load switch D 2 D 2 D 1 D 1or in PWM applications. 6 58 7Q48281 2 43 FEATURESS 2 G 2 G 1S 1 Marking and pin AssignmentV

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .