MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM Power-Transistor, 300 VIPB407N30NData SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM Power-Transistor, 300 VIPB407N30NDPAK1 DescriptionFeatures N-channel, normal level Fast Diode with reduced Qrr Optimized for hard commutation ruggedness Very low on-resistance

Isc N-Channel MOSFET Transistor IPB407N30NFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vo