IPB407N30N MOSFET. Datasheet pdf. Equivalent
Type Designator: IPB407N30N
Marking Code: 407N30N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 300 W
Maximum Drain-Source Voltage |Vds|: 300 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 44 A
Maximum Junction Temperature (Tj): 175 °C
Rise Time (tr): 9 nS
Drain-Source Capacitance (Cd): 281 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0407 Ohm
Package: TO-263
IPB407N30N Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPB407N30N Datasheet (PDF)
1.1. ipb407n30n.pdf 
Size:1116K _infineon
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM Power-Transistor, 300 V IPB407N30N Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOSTM Power-Transistor, 300 V IPB407N30N D²PAK 1 Description Features • N-channel, normal level • Fast Diode with reduced Q rr • Optimized for hard commutation ruggedness • Very low on-resistance
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