IPB407N30N Datasheet and Replacement
Type Designator: IPB407N30N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 44 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 281 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0407 Ohm
Package: TO-263
IPB407N30N substitution
IPB407N30N Datasheet (PDF)
ipb407n30n.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM Power-Transistor, 300 VIPB407N30NData SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM Power-Transistor, 300 VIPB407N30NDPAK1 DescriptionFeatures N-channel, normal level Fast Diode with reduced Qrr Optimized for hard commutation ruggedness Very low on-resistance
ipb407n30n.pdf

Isc N-Channel MOSFET Transistor IPB407N30NFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vo
Datasheet: IPB65R125C7 , IPB65R110CFDA , IPB65R110CFD , IPB65R099C6 , IPB65R095C7 , IPB65R065C7 , IPB65R045C7 , IPB45N06S3-16 , IRFZ46N , IPB14N03LA , IPB12CN10NG , IPB117N20NFD , IPB110N06LG , IPB107N20NA , IPB100N06S3-04 , IPB09N03LAG , IPB09N03LA .
Keywords - IPB407N30N MOSFET datasheet
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