IPB407N30N PDF and Equivalents Search

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM Power-Transistor, 300 V IPB407N30N Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOSTM Power-Transistor, 300 V IPB407N30N D PAK 1 Description Features N-channel, normal level Fast Diode with reduced Q rr Optimized for hard commutation ruggedness Very low on-resistance ... See More ⇒

Isc N-Channel MOSFET Transistor IPB407N30N FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vo... See More ⇒