All MOSFET. IPB407N30N Datasheet

 

IPB407N30N MOSFET. Datasheet pdf. Equivalent

Type Designator: IPB407N30N

Marking Code: 407N30N

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 300 W

Maximum Drain-Source Voltage |Vds|: 300 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 44 A

Maximum Junction Temperature (Tj): 175 °C

Rise Time (tr): 9 nS

Drain-Source Capacitance (Cd): 281 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0407 Ohm

Package: TO-263

IPB407N30N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPB407N30N Datasheet (PDF)

1.1. ipb407n30n.pdf Size:1116K _infineon

IPB407N30N
IPB407N30N

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM Power-Transistor, 300 V IPB407N30N Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOSTM Power-Transistor, 300 V IPB407N30N D²PAK 1 Description Features • N-channel, normal level • Fast Diode with reduced Q rr • Optimized for hard commutation ruggedness • Very low on-resistance

Datasheet: IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , J111 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP441 , IRFP442 , IRFP443 .

 

 
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