IPB407N30N Datasheet. Specs and Replacement

Type Designator: IPB407N30N  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 44 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 281 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0407 Ohm

Package: TO-263

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IPB407N30N datasheet

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IPB407N30N

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM Power-Transistor, 300 V IPB407N30N Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOSTM Power-Transistor, 300 V IPB407N30N D PAK 1 Description Features N-channel, normal level Fast Diode with reduced Q rr Optimized for hard commutation ruggedness Very low on-resistance ... See More ⇒

 ..2. Size:258K  inchange semiconductor
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IPB407N30N

Isc N-Channel MOSFET Transistor IPB407N30N FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vo... See More ⇒

Detailed specifications: IPB65R125C7, IPB65R110CFDA, IPB65R110CFD, IPB65R099C6, IPB65R095C7, IPB65R065C7, IPB65R045C7, IPB45N06S3-16, STF13NM60N, IPB14N03LA, IPB12CN10NG, IPB117N20NFD, IPB110N06LG, IPB107N20NA, IPB100N06S3-04, IPB09N03LAG, IPB09N03LA

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