All MOSFET. IPB407N30N Datasheet

 

IPB407N30N MOSFET. Datasheet pdf. Equivalent

Type Designator: IPB407N30N

Marking Code: 407N30N

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 300 W

Maximum Drain-Source Voltage |Vds|: 300 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 44 A

Maximum Junction Temperature (Tj): 175 °C

Rise Time (tr): 9 nS

Drain-Source Capacitance (Cd): 281 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0407 Ohm

Package: TO-263

IPB407N30N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPB407N30N Datasheet (PDF)

1.1. ipb407n30n.pdf Size:1116K _infineon

IPB407N30N IPB407N30N

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM Power-Transistor, 300 V IPB407N30N Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOSTM Power-Transistor, 300 V IPB407N30N D²PAK 1 Description Features • N-channel, normal level • Fast Diode with reduced Q rr • Optimized for hard commutation ruggedness • Very low on-resistance

1.2. ipb407n30n.pdf Size:258K _inchange_semiconductor

IPB407N30N IPB407N30N

Isc N-Channel MOSFET Transistor IPB407N30N ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vo

 

Datasheet: IPB65R125C7 , IPB65R110CFDA , IPB65R110CFD , IPB65R099C6 , IPB65R095C7 , IPB65R065C7 , IPB65R045C7 , IPB45N06S3-16 , IRFZ44A , IPB14N03LA , IPB12CN10NG , IPB117N20NFD , IPB110N06LG , IPB107N20NA , IPB100N06S3-04 , IPB09N03LAG , IPB09N03LA .

 

 
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