All MOSFET. IPB407N30N Datasheet

 

IPB407N30N Datasheet and Replacement


   Type Designator: IPB407N30N
   Marking Code: 407N30N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 44 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 281 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0407 Ohm
   Package: TO-263
 

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IPB407N30N Datasheet (PDF)

 ..1. Size:1116K  infineon
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IPB407N30N

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM Power-Transistor, 300 VIPB407N30NData SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM Power-Transistor, 300 VIPB407N30NDPAK1 DescriptionFeatures N-channel, normal level Fast Diode with reduced Qrr Optimized for hard commutation ruggedness Very low on-resistance

 ..2. Size:258K  inchange semiconductor
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IPB407N30N

Isc N-Channel MOSFET Transistor IPB407N30NFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vo

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

Keywords - IPB407N30N MOSFET datasheet

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