All MOSFET. IPB407N30N Datasheet

 

IPB407N30N Datasheet and Replacement


   Type Designator: IPB407N30N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 44 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 281 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0407 Ohm
   Package: TO-263
 

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IPB407N30N Datasheet (PDF)

 ..1. Size:1116K  infineon
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IPB407N30N

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM Power-Transistor, 300 VIPB407N30NData SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM Power-Transistor, 300 VIPB407N30NDPAK1 DescriptionFeatures N-channel, normal level Fast Diode with reduced Qrr Optimized for hard commutation ruggedness Very low on-resistance

 ..2. Size:258K  inchange semiconductor
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IPB407N30N

Isc N-Channel MOSFET Transistor IPB407N30NFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vo

Datasheet: IPB65R125C7 , IPB65R110CFDA , IPB65R110CFD , IPB65R099C6 , IPB65R095C7 , IPB65R065C7 , IPB65R045C7 , IPB45N06S3-16 , 2N60 , IPB14N03LA , IPB12CN10NG , IPB117N20NFD , IPB110N06LG , IPB107N20NA , IPB100N06S3-04 , IPB09N03LAG , IPB09N03LA .

History: SPD15P10PLG | IPD60R180P7S

Keywords - IPB407N30N MOSFET datasheet

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