FQPF9N90CT. Аналоги и основные параметры

Наименование производителя: FQPF9N90CT

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 68 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 900 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 8 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 120 ns

Cossⓘ - Выходная емкость: 175 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1.4 Ohm

Тип корпуса: TO-220F

Аналог (замена) для FQPF9N90CT

- подборⓘ MOSFET транзистора по параметрам

 

FQPF9N90CT даташит

 ..1. Size:840K  fairchild semi
 fqpf9n90ct.pdf pdf_icon

FQPF9N90CT

TM QFET FQP9N90C/FQPF9N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 8.0 A, 900V, RDS(on) = 1.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 45nC) planar stripe, DMOS technology. Low Crss ( typical 14pF) This advanced technology has been especially tailored to

 5.1. Size:842K  fairchild semi
 fqp9n90c fqpf9n90c.pdf pdf_icon

FQPF9N90CT

TM QFET FQP9N90C/FQPF9N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 8.0 A, 900V, RDS(on) = 1.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 45nC) planar stripe, DMOS technology. Low Crss ( typical 14pF) This advanced technology has been especially tailored to

 5.2. Size:1200K  onsemi
 fqp9n90c fqpf9n90c.pdf pdf_icon

FQPF9N90CT

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 5.3. Size:232K  inchange semiconductor
 fqpf9n90c.pdf pdf_icon

FQPF9N90CT

isc N-Channel MOSFET Transistor FQPF9N90C DESCRIPTION RDS(on) = 1.4 @VGS = 10 V, ID = 4 A Fast Switching Speed 100% Avalanche Tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) C SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 900 V DS

ПОКАЗАТЬ ЕЩЁ

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