All MOSFET. FQPF9N90CT Datasheet

 

FQPF9N90CT MOSFET. Datasheet pdf. Equivalent


   Type Designator: FQPF9N90CT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 68 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 45 nC
   trⓘ - Rise Time: 120 nS
   Cossⓘ - Output Capacitance: 175 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO-220F

 FQPF9N90CT Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQPF9N90CT Datasheet (PDF)

 ..1. Size:840K  fairchild semi
 fqpf9n90ct.pdf

FQPF9N90CT FQPF9N90CT

TMQFETFQP9N90C/FQPF9N90C900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 8.0 A, 900V, RDS(on) = 1.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 45nC)planar stripe, DMOS technology. Low Crss ( typical 14pF)This advanced technology has been especially tailored to

 5.1. Size:842K  fairchild semi
 fqp9n90c fqpf9n90c.pdf

FQPF9N90CT FQPF9N90CT

TMQFETFQP9N90C/FQPF9N90C900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 8.0 A, 900V, RDS(on) = 1.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 45nC)planar stripe, DMOS technology. Low Crss ( typical 14pF)This advanced technology has been especially tailored to

 5.2. Size:1200K  onsemi
 fqp9n90c fqpf9n90c.pdf

FQPF9N90CT FQPF9N90CT

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 5.3. Size:232K  inchange semiconductor
 fqpf9n90c.pdf

FQPF9N90CT FQPF9N90CT

isc N-Channel MOSFET Transistor FQPF9N90CDESCRIPTIONRDS(on) = 1.4 @VGS = 10 V, ID = 4 AFast Switching Speed100% Avalanche TestedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)CSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage (V =0) 900 VDS

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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