All MOSFET. FQPF9N90CT Datasheet

 

FQPF9N90CT MOSFET. Datasheet pdf. Equivalent

Type Designator: FQPF9N90CT

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 68 W

Maximum Drain-Source Voltage |Vds|: 900 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 8 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 45 nC

Rise Time (tr): 120 nS

Drain-Source Capacitance (Cd): 175 pF

Maximum Drain-Source On-State Resistance (Rds): 1.4 Ohm

Package: TO-220F

FQPF9N90CT Transistor Equivalent Substitute - MOSFET Cross-Reference Search

FQPF9N90CT Datasheet (PDF)

1.1. fqp9n90c fqpf9n90c.pdf Size:842K _fairchild_semi

FQPF9N90CT
FQPF9N90CT

TM QFET FQP9N90C/FQPF9N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 8.0 A, 900V, RDS(on) = 1.4 ? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 45nC) planar stripe, DMOS technology. Low Crss ( typical 14pF) This advanced technology has been especially tailored to Fast swit

1.2. fqpf9n90ct.pdf Size:840K _fairchild_semi

FQPF9N90CT
FQPF9N90CT

TM QFET FQP9N90C/FQPF9N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 8.0 A, 900V, RDS(on) = 1.4 Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 45nC) planar stripe, DMOS technology. • Low Crss ( typical 14pF) This advanced technology has been especially tailored to

 4.1. fqpf9n50c.pdf Size:770K _fairchild_semi

FQPF9N90CT
FQPF9N90CT

November 2013 FQPF9N50C N-Channel QFET® MOSFET 500 V, 9 A, 800 mΩ Description Features These N-Channel enhancement mode power field effect 9 A, 500 V, RDS(on) = 800 mΩ (Max.) @ VGS = 10 V, • transistors are produced using Fairchild s proprietary, ID = 4.5 A planar stripe, DMOS technology. This advanced • Low Gate Charge (Typ. 28 nC) technology has been especially tailored to m

4.2. fqp9n25c fqpf9n25ct fqpf9n25cydtu.pdf Size:1134K _fairchild_semi

FQPF9N90CT
FQPF9N90CT

® QFET FQP9N25C/FQPF9N25C 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 8.8A, 250V, RDS(on) = 0.43Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 26.5 nC) planar stripe, DMOS technology. • Low Crss ( typical 45.5 pF) This advanced technology has been especially tailor

 4.3. fqpf9n08l.pdf Size:553K _fairchild_semi

FQPF9N90CT
FQPF9N90CT

December 2000 TM QFET QFET QFET QFET FQPF9N08L 80V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 7.0A, 80V, RDS(on) = 0.21Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.7 nC) planar stripe, DMOS technology. • Low Crss ( typical 16 pF) This advanced technology i

4.4. fqp9n25c fqpf9n25c.pdf Size:1136K _fairchild_semi

FQPF9N90CT
FQPF9N90CT

QFET FQP9N25C/FQPF9N25C 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 8.8A, 250V, RDS(on) = 0.43? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 26.5 nC) planar stripe, DMOS technology. Low Crss ( typical 45.5 pF) This advanced technology has been especially tailored to Fast

 4.5. fqpf9n50ct fqpf9n50cydtu.pdf Size:844K _fairchild_semi

FQPF9N90CT
FQPF9N90CT

TM QFET FQP9N50C/FQPF9N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 9 A, 500V, RDS(on) = 0.8 Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 28 nC) planar stripe, DMOS technology. • Low Crss ( typical 24 pF) This advanced technology has been especially tailored to

4.6. fqpf9n50cf.pdf Size:765K _fairchild_semi

FQPF9N90CT
FQPF9N90CT

December 2005 TM FRFET FQPF9N50CF 500V N-Channel MOSFET Features Description 9A, 500V, RDS(on) = 0.85? @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchilds proprietary, planar stripe, Low gate charge (typical 28 nC) DMOS technology. Low Crss (typical 24pF) This advanced technology has been especially tailored to mini- Fast

4.7. fqpf9n15.pdf Size:745K _fairchild_semi

FQPF9N90CT
FQPF9N90CT

May 2000 TM QFET QFET QFET QFET 150V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 6.9A, 150V, RDS(on) = 0.4Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 10 nC) planar stripe, DMOS technology. • Low Crss ( typical 17 pF) This advanced technology has been esp

4.8. fqpf9n50ydtu fqpf9n50 fqpf9n50t.pdf Size:712K _fairchild_semi

FQPF9N90CT
FQPF9N90CT

April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 5.3A, 500V, RDS(on) = 0.73Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 28 nC) planar stripe, DMOS technology. • Low Crss ( typical 20 pF) This advanced technology has been

4.9. fqpf9n08.pdf Size:549K _fairchild_semi

FQPF9N90CT
FQPF9N90CT

December 2000 TM QFET QFET QFET QFET FQPF9N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 7.0A, 80V, RDS(on) = 0.21Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 5.9 nC) planar stripe, DMOS technology. • Low Crss ( typical 13 pF) This advanced technology is espec

4.10. fqpf9n30.pdf Size:659K _fairchild_semi

FQPF9N90CT
FQPF9N90CT

May 2000 TM QFET QFET QFET QFET FQPF9N30 300V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 6.0A, 300V, RDS(on) = 0.45Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 17 nC) planar stripe, DMOS technology. • Low Crss ( typical 16 pF) This advanced technology has been esp

4.11. fqp9n50c fqpf9n50c.pdf Size:845K _fairchild_semi

FQPF9N90CT
FQPF9N90CT

TM QFET FQP9N50C/FQPF9N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9 A, 500V, RDS(on) = 0.8 ? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 24 pF) This advanced technology has been especially tailored to Fast swit

Datasheet: IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , 75339P , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC .

 
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