Справочник MOSFET. IRL2203NL

 

IRL2203NL MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRL2203NL
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 180 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 16 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1(min) V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 116 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 60(max) nC
   trⓘ - Время нарастания: 160 ns
   Cossⓘ - Выходная емкость: 1270 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.007 Ohm
   Тип корпуса: TO262

 Аналог (замена) для IRL2203NL

 

 

IRL2203NL Datasheet (PDF)

 ..1. Size:290K  international rectifier
irl2203nlpbf irl2203nspbf.pdf

IRL2203NL
IRL2203NL

PD - 95219AIRL2203NSPbFIRL2203NLPbFl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-Resistancel Dynamic dv/dt RatingDVDSS = 30Vl 175C Operating Temperaturel Fast Switchingl Fully Avalanche Rated RDS(on) = 7.0mGl 100% RG Testedl Lead-FreeID = 116ASDescriptionAdvanced HEXFET Power MOSFETs from International Rectifierutilize advanced

 ..2. Size:132K  international rectifier
irl2203ns irl2203nl.pdf

IRL2203NL
IRL2203NL

PD - 94394IRL2203NSIRL2203NLHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 30V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 7.0m Fast SwitchingG Fully Avalanche RatedID = 116A SDescriptionAdvanced HEXFET Power MOSFETs from International Rectifierutilize advanced processing techniques to achieve extremely lo

 ..3. Size:290K  infineon
irl2203nspbf irl2203nlpbf.pdf

IRL2203NL
IRL2203NL

PD - 95219AIRL2203NSPbFIRL2203NLPbFl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-Resistancel Dynamic dv/dt RatingDVDSS = 30Vl 175C Operating Temperaturel Fast Switchingl Fully Avalanche Rated RDS(on) = 7.0mGl 100% RG Testedl Lead-FreeID = 116ASDescriptionAdvanced HEXFET Power MOSFETs from International Rectifierutilize advanced

 6.1. Size:186K  international rectifier
irl2203npbf.pdf

IRL2203NL
IRL2203NL

PD - 94953IRL2203NPbFHEXFET Power MOSFETl Advanced Process TechnologyDVDSS = 30Vl Ultra Low On-Resistancel Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 7.0mGl Fast Switchingl Fully Avalanche RatedID = 116Al Lead-Free SDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextr

 6.2. Size:221K  international rectifier
irl2203n.pdf

IRL2203NL
IRL2203NL

PD - 91366IRL2203NHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 30V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 7.0mG Fast Switching Fully Avalanche RatedID = 116A SDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resist

 6.3. Size:211K  international rectifier
auirl2203n.pdf

IRL2203NL
IRL2203NL

AUTOMOTIVE GRADEAUIRL2203NFeatures HEXFET Power MOSFETl Advanced Planar TechnologyDV(BR)DSSl Low On-Resistance 30Vl Logic Level Gate Drivel Dynamic dV/dT RatingRDS(on) max.7ml 175C Operating TemperatureGl Fast SwitchingID (Silicon Limited) 116Al Fully Avalanche Ratedl Repetitive Avalanche Allowed up to TjmaxSID (Package Limited) 75Al Lead-Free, RoHS C

 6.4. Size:186K  infineon
irl2203npbf.pdf

IRL2203NL
IRL2203NL

PD - 94953IRL2203NPbFHEXFET Power MOSFETl Advanced Process TechnologyDVDSS = 30Vl Ultra Low On-Resistancel Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 7.0mGl Fast Switchingl Fully Avalanche RatedID = 116Al Lead-Free SDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextr

 6.5. Size:246K  inchange semiconductor
irl2203n.pdf

IRL2203NL
IRL2203NL

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRL2203NIIRL2203NFEATURESStatic drain-source on-resistance:RDS(on) 7.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

 6.6. Size:270K  inchange semiconductor
irl2203ns.pdf

IRL2203NL
IRL2203NL

isc N-Channel MOSFET Transistor IRL2203NSDESCRIPTIONStatic drain-source on-resistance:RDS(on) 7m@V = 10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .Provides the designer with an extremely efficient andreliable device for use in a wide variety of applications.ABSOLUTE MAXIMUM RATINGS

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