All MOSFET. IRL2203NL Datasheet

 

IRL2203NL MOSFET. Datasheet pdf. Equivalent

Type Designator: IRL2203NL

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 170 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 16 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V

Maximum Drain Current |Id|: 116 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 40 nC

Maximum Drain-Source On-State Resistance (Rds): 0.007 Ohm

Package: TO262

IRL2203NL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRL2203NL Datasheet (PDF)

1.1. irl2203nlpbf irl2203nspbf.pdf Size:290K _upd

IRL2203NL
IRL2203NL

PD - 95219A IRL2203NSPbF IRL2203NLPbF l Advanced Process Technology HEXFET® Power MOSFET l Ultra Low On-Resistance l Dynamic dv/dt Rating D VDSS = 30V l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated RDS(on) = 7.0mΩ G l 100% RG Tested l Lead-Free ID = 116A‡ S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced

2.1. irl2203npbf.pdf Size:186K _upd

IRL2203NL
IRL2203NL

PD - 94953 IRL2203NPbF HEXFET Power MOSFET l Advanced Process Technology D VDSS = 30V l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature RDS(on) = 7.0mΩ G l Fast Switching l Fully Avalanche Rated ID = 116A‡ l Lead-Free S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extr

2.2. irl2203ns.pdf Size:132K _international_rectifier

IRL2203NL
IRL2203NL

PD - 94394 IRL2203NS IRL2203NL HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 30V Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 7.0m? Fast Switching G Fully Avalanche Rated ID = 116A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on- r

 2.3. irl2203n.pdf Size:221K _international_rectifier

IRL2203NL
IRL2203NL

PD - 91366 IRL2203N HEXFET Power MOSFET Advanced Process Technology D VDSS = 30V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 7.0m? G Fast Switching Fully Avalanche Rated ID = 116A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per

Datasheet: IRFZ46NS , IRFZ48N , IRFZ48NL , IRFZ48NS , IRL1004 , IRL1004L , IRL1004S , IRL2203N , IRFZ46N , IRL2203NS , IRL2505 , IRL2505L , IRL2505S , IRL2703 , IRL2703S , IRL2910 , IRL2910L .

 
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