ST2341S23RG Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: ST2341S23RG
Тип транзистора: MOSFET
Полярность: P
Pd ⓘ - Максимальная рассеиваемая мощность: 1.25 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 5.3 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 35 ns
Cossⓘ - Выходная емкость: 160 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.04 Ohm
Тип корпуса: SOT-23
Аналог (замена) для ST2341S23RG
ST2341S23RG Datasheet (PDF)
st2341s23rg.pdf

ST2341S23RG P Channel Enhancement Mode MOSFET -5.3A DESCRIPTION ST2341S23RG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular pho
st2341s23r.pdf

ST2341S23Rwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-
st2341srg.pdf

ST2341SRG P Channel Enhancement Mode MOSFET -3.2A DESCRIPTION ST2341SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and
st2341a.pdf

ST2341A P Channel Enhancement Mode MOSFET -6.0A DESCRIPTION ST2341A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and n
Другие MOSFET... ST2303SRG , ST2304 , ST2304SRG , ST2305 , ST2305A , ST2318SRG , ST2319SRG , ST2341A , 7N65 , ST2342 , ST25N10 , ST3400S23RG , ST3400SRG , ST3401M23RG , ST3401SRG , ST3406 , ST3406SRG .
History: KI005PDFN | MS17N03Q8 | SMK1260WF | IRF9640L | DH0159B | SSF1090D | 2SK4121LS
History: KI005PDFN | MS17N03Q8 | SMK1260WF | IRF9640L | DH0159B | SSF1090D | 2SK4121LS



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