CS1405N PD TC=25 330 W 2.2 W/VGS=10V,TC=25 169ID A VGS=10V,TC=100 118 VGS 20 VTjm +150 Tstg -55 +150 RthJC 0.45 /W BVDSS VGS=0V,ID=0.25mA 55 VRDS on VGS=10V,ID=39A 7.2 10 mVGS th VDS=10

N RN-CHANNEL MOSFET JCS1404 Package MAIN CHARACTERISTICS ID 204 A VDSS 40 V Rdson-max 4 m @Vgs=10V Qg-typ 106nC APPLICATIONS High efficiency switch mode power supplies UPS UPS FEATURES Low gate charge

N RN-CHANNEL MOSFET JCS1404 Package MAIN CHARACTERISTICS ID 204 A VDSS 40 V Rdson-max 4 m @Vgs=10V Qg-typ 106nC APPLICATIONS High efficiency switch mode power supplies UPS UPS FEATURES Low gate charge

BRCS140P03YB Rev.A Feb.-2022 DATA SHEET / Descriptions PDFN33A-8L P MOS P-Channel Enhancement Mode Field Effect Transistor in a PDFN 33A-8L Plastic Package. / Features VDS (V) = -30V ID =-34 A (VGS = 20V) RDS(ON)@10V14mR(Typ.12.8mR) HFProduct. / Applications DC/DC

CS140N10A N PD TC=25 150 W 1.2 W/ ID VGS=10V,TC=25 75 A IDM 140 A VGS 17 V Tjm +150 Tstg -55 +150 RthJC 0.4 /W BVDSS VGS=0V,ID=0.25mA 100 V RDS on VGS=10V,ID=39A 0.02 VGS th VDS=VGS,I