CS1405
MOSFET. Datasheet pdf. Equivalent
Type Designator: CS1405
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 330
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 169
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01
Ohm
Package:
TO-257
CS1405
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CS1405
Datasheet (PDF)
..1. Size:58K china
cs1405.pdf 
CS1405N PD TC=25 330 W 2.2 W/VGS=10V,TC=25 169ID A VGS=10V,TC=100 118 VGS 20 VTjm +150 Tstg -55 +150 RthJC 0.45 /W BVDSS VGS=0V,ID=0.25mA 55 VRDS on VGS=10V,ID=39A 7.2 10 mVGS th VDS=10
9.1. Size:1073K jilin sino
jcs1404c jcs1404s.pdf
N RN-CHANNEL MOSFET JCS1404 Package MAIN CHARACTERISTICS ID 204 A VDSS 40 V Rdson-max 4 m @Vgs=10V Qg-typ 106nC APPLICATIONS High efficiency switch mode power supplies UPS UPS FEATURES Low gate charge
9.2. Size:630K jilin sino
jcs1404c jcs1404f.pdf
N RN-CHANNEL MOSFET JCS1404 Package MAIN CHARACTERISTICS ID 204 A VDSS 40 V Rdson-max 4 m @Vgs=10V Qg-typ 106nC APPLICATIONS High efficiency switch mode power supplies UPS UPS FEATURES Low gate charge
9.3. Size:1748K blue-rocket-elect
brcs140p03yb.pdf
BRCS140P03YB Rev.A Feb.-2022 DATA SHEET / Descriptions PDFN33A-8L P MOS P-Channel Enhancement Mode Field Effect Transistor in a PDFN 33A-8L Plastic Package. / Features VDS (V) = -30V ID =-34 A (VGS = 20V) RDS(ON)@10V14mR(Typ.12.8mR) HFProduct. / Applications DC/DC
9.4. Size:109K china
cs140n10a.pdf
CS140N10A N PD TC=25 150 W 1.2 W/ ID VGS=10V,TC=25 75 A IDM 140 A VGS 17 V Tjm +150 Tstg -55 +150 RthJC 0.4 /W BVDSS VGS=0V,ID=0.25mA 100 V RDS on VGS=10V,ID=39A 0.02 VGS th VDS=VGS,I
Datasheet: FQT7N10L
, FDP083N15A
, FQU10N20C
, FDP075N15A
, FQU11P06
, FQU12N20
, FDPF085N10A
, FQU13N06L
, IRFZ44
, FDB86102LZ
, FQU17P06
, FQU1N60C
, FDP085N10A
, FQU20N06L
, FQU2N100
, FQU2N60C
, FDMC8030
.
