SKI06106 - Даташиты. Аналоги. Основные параметры

60 V, 57 A, 7.0 m Low RDS(ON) N ch Trench Power MOSFET SKI06106 Features Package TO-263 V(BR)DSS --------------------------------- 60 V (ID = 100 A) ID ---------------------------------------------------------- 57 A (4) D RDS(ON) ---------- 9.2 m max. (VGS = 10 V, ID = 28.5 A) Qg ------16.9 nC (VGS = 4.5 V, VDS = 30 V, ID = 28.5 A) Low Total Gate

isc N-Channel MOSFET Transistor SKI06106 FEATURES Drain Current I = 57A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 9.2m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

60 V, 78 A, 5.1 m Low RDS(ON) N ch Trench Power MOSFET SKI06073 Features Package TO-263 V(BR)DSS --------------------------------- 60 V (ID = 100 A) ID ---------------------------------------------------------- 78 A (4) D RDS(ON) ---------- 6.6 m max. (VGS = 10 V, ID = 39.0 A) Qg ------26.9 nC (VGS = 4.5 V, VDS = 30 V, ID = 39.0 A) Low Total Gate

60 V, 85 A, 3.9 m Low RDS(ON) N ch Trench Power MOSFET SKI06048 Features Package TO-263 V(BR)DSS --------------------------------- 60 V (ID = 100 A) ID ---------------------------------------------------------- 85 A (4) D RDS(ON) ---------- 4.9 m max. (VGS = 10 V, ID = 55.0 A) Qg ------44.9 nC (VGS = 4.5 V, VDS = 30 V, ID = 55.0 A) Low Total Gate

isc N-Channel MOSFET Transistor SKI06073 FEATURES Drain Current I = 78A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 6.6m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

isc N-Channel MOSFET Transistor SKI06048 FEATURES Drain Current I = 85A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 4.9m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo