SKI06106 MOSFET. Datasheet pdf. Equivalent
Type Designator: SKI06106
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 90 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 57 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 36.2 nC
trⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 280 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0092 Ohm
Package: TO-263
SKI06106 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SKI06106 Datasheet (PDF)
ski06106.pdf
60 V, 57 A, 7.0 m Low RDS(ON) N ch Trench Power MOSFET SKI06106 Features Package TO-263 V(BR)DSS --------------------------------- 60 V (ID = 100 A) ID ---------------------------------------------------------- 57 A (4) D RDS(ON) ---------- 9.2 m max. (VGS = 10 V, ID = 28.5 A) Qg ------16.9 nC (VGS = 4.5 V, VDS = 30 V, ID = 28.5 A) Low Total Gate
ski06106.pdf
isc N-Channel MOSFET Transistor SKI06106FEATURESDrain Current I = 57A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 9.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
ski06073.pdf
60 V, 78 A, 5.1 m Low RDS(ON) N ch Trench Power MOSFET SKI06073 Features Package TO-263 V(BR)DSS --------------------------------- 60 V (ID = 100 A) ID ---------------------------------------------------------- 78 A (4) D RDS(ON) ---------- 6.6 m max. (VGS = 10 V, ID = 39.0 A) Qg ------26.9 nC (VGS = 4.5 V, VDS = 30 V, ID = 39.0 A) Low Total Gate
ski06048.pdf
60 V, 85 A, 3.9 m Low RDS(ON) N ch Trench Power MOSFET SKI06048 Features Package TO-263 V(BR)DSS --------------------------------- 60 V (ID = 100 A) ID ---------------------------------------------------------- 85 A (4) D RDS(ON) ---------- 4.9 m max. (VGS = 10 V, ID = 55.0 A) Qg ------44.9 nC (VGS = 4.5 V, VDS = 30 V, ID = 55.0 A) Low Total Gate
ski06073.pdf
isc N-Channel MOSFET Transistor SKI06073FEATURESDrain Current I = 78A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 6.6m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
ski06048.pdf
isc N-Channel MOSFET Transistor SKI06048FEATURESDrain Current I = 85A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 4.9m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
