STH140N6F7 - аналоги, параметры транзистора - Справочник транзисторов

STH140N6F7 технические параметры

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STH140N6F7-2, STH140N6F7-6 N-channel 60 V, 0.0028 typ., 80 A STripFET F7 Power MOSFETs in H PAK-2 and H PAK-6 packages Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STH140N6F7-2 60 V 0.0032 80 A 158 W STH140N6F7-6 Among the lowest R on the market DS(on) Excellent figure of merit (FoM) Low C /C ratio for EMI immunity

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Isc N-Channel MOSFET Transistor ISTH140N6F7 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V

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STH140N8F7-2 N-channel 80 V, 3.3 m typ., 90 A STripFET F7 Power MOSFET in a H2PAK-2 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STH140N8F7-2 80 V 4 m 90 A 200 W Among the lowest R on the market DS(on) Excellent figure of merit (FoM) Low C /C ratio for EMI immunity rss iss High avalanche ruggedness Applicati

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