STH140N6F7 Datasheet. Specs and Replacement

Type Designator: STH140N6F7  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 158 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 68 nS

Cossⓘ - Output Capacitance: 1520 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0032 Ohm

Package: D2PAK TO-263

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STH140N6F7 datasheet

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STH140N6F7

STH140N6F7-2, STH140N6F7-6 N-channel 60 V, 0.0028 typ., 80 A STripFET F7 Power MOSFETs in H PAK-2 and H PAK-6 packages Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STH140N6F7-2 60 V 0.0032 80 A 158 W STH140N6F7-6 Among the lowest R on the market DS(on) Excellent figure of merit (FoM) Low C /C ratio for EMI immunity ... See More ⇒

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STH140N6F7

Isc N-Channel MOSFET Transistor ISTH140N6F7 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V... See More ⇒

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STH140N6F7

STH140N8F7-2 N-channel 80 V, 3.3 m typ., 90 A STripFET F7 Power MOSFET in a H2PAK-2 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STH140N8F7-2 80 V 4 m 90 A 200 W Among the lowest R on the market DS(on) Excellent figure of merit (FoM) Low C /C ratio for EMI immunity rss iss High avalanche ruggedness Applicati... See More ⇒

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STH140N6F7

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Detailed specifications: MTD300N20J3, NTHL040N65S3F, NVD4C05NT4G, IXTH12N70X2, PSMN3R7-100BSE, R6018JNX, SIHG47N60AEF, STD140N6F7, 60N06, STP140N6F7, SUP70060E, TK13A60W, VN1206N5, VN1210N2, WFD5N65L, CJ1012, CJ1012-G

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