STH140N6F7 Datasheet and Replacement
Type Designator: STH140N6F7
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 158 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 68 nS
Cossⓘ - Output Capacitance: 1520 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0032 Ohm
Package: D2PAK TO-263
STH140N6F7 substitution
STH140N6F7 Datasheet (PDF)
sth140n6f7.pdf

STH140N6F7-2, STH140N6F7-6 N-channel 60 V, 0.0028 typ., 80 A STripFET F7 Power MOSFETs in HPAK-2 and HPAK-6 packages Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTH140N6F7-2 60 V 0.0032 80 A 158 W STH140N6F7-6 Among the lowest R on the market DS(on) Excellent figure of merit (FoM) Low C /C ratio for EMI immunity
isth140n6f7.pdf

Isc N-Channel MOSFET Transistor ISTH140N6F7FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V
sth140n8f7-2.pdf

STH140N8F7-2 N-channel 80 V, 3.3 m typ., 90 A STripFET F7 Power MOSFET in a H2PAK-2 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTH140N8F7-2 80 V 4 m 90 A 200 W Among the lowest R on the market DS(on) Excellent figure of merit (FoM) Low C /C ratio for EMI immunity rss iss High avalanche ruggedness Applicati
Datasheet: MTD300N20J3 , NTHL040N65S3F , NVD4C05NT4G , IXTH12N70X2 , PSMN3R7-100BSE , R6018JNX , SIHG47N60AEF , STD140N6F7 , RU6888R , STP140N6F7 , SUP70060E , TK13A60W , VN1206N5 , VN1210N2 , WFD5N65L , CJ1012 , CJ1012-G .
Keywords - STH140N6F7 MOSFET datasheet
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