MTP4N45 - аналоги, параметры транзистора - Справочник транзисторов

..1. Size:145K fairchild semi
mtm4n45 mtm4n50 mtp4n45 mtp4n50.pdf pdf_icon

8.1. Size:138K motorola
mtp4n40e.pdf pdf_icon

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP4N40E/D Designer's Data Sheet MTP4N40E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 4.0 AMPERES scheme to provide enhanced voltage blocking capability without 400 VOLTS degra

8.2. Size:239K motorola
mtp4n40erev2.pdf pdf_icon

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP4N40E/D Designer's Data Sheet MTP4N40E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 4.0 AMPERES scheme to provide enhanced voltage blocking capability without 400 VOLTS degra

9.1. Size:254K motorola
mtp4n50erev1a.pdf pdf_icon

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP4N50E/D Designer's Data Sheet MTP4N50E TMOS E-FET. Motorola Preferred Device High Energy Power FET N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced high voltage TMOS E FET is designed to 4.0 AMPERES withstand high energy in the avalanche mode and switch efficiently. 500 VOLTS This new

9.2. Size:245K motorola
mtp4n80e.pdf pdf_icon

MTP4N80 PCB 24 MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP4N80E/D Designer's Data Sheet MTP4N80E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 4.0 AMPERES s

9.3. Size:217K motorola
mtp4n50e.pdf pdf_icon

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP4N50E/D Designer's Data Sheet MTP4N50E TMOS E-FET. Motorola Preferred Device High Energy Power FET N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced high voltage TMOS E FET is designed to 4.0 AMPERES withstand high energy in the avalanche mode and switch efficiently. 500 VOLTS This new

9.4. Size:56K motorola
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9.5. Size:159K motorola
mtp4n80erev5.pdf pdf_icon

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP4N80E/D Designer's Data Sheet MTP4N80E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 4.0 AMPERES scheme to provide enhanced voltage blocking capability without 800 VOLTS degra

9.6. Size:57K njs
mtp4n60.pdf pdf_icon