MTP4N45 Datasheet and Replacement
Type Designator: MTP4N45
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 300 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO-220AB
MTP4N45 substitution
MTP4N45 Datasheet (PDF)
mtp4n40e.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP4N40E/DDesigner's Data SheetMTP4N40ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination4.0 AMPERESscheme to provide enhanced voltageblocking capability without400 VOLTSdegra
mtp4n40erev2.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP4N40E/DDesigner's Data SheetMTP4N40ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination4.0 AMPERESscheme to provide enhanced voltageblocking capability without400 VOLTSdegra
mtp4n50erev1a.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP4N50E/DDesigner's Data SheetMTP4N50ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced high voltage TMOS EFET is designed to4.0 AMPERESwithstand high energy in the avalanche mode and switch efficiently.500 VOLTSThis new
Datasheet: MTP3N55 , MTP3N75 , MTP3N80 , MTP3N95 , MTP3P25 , MTP4N08 , MTP4N10 , MTP4N40E , IRF540N , MTP4N50 , MTP4N60 , MTP4N80E , MTP4N85 , MTP4N90 , MTP50N06V , MTP50P03HDLG , MTP5N05 .
History: 2SJ238 | PA610DTF | AP3A010MT | PHK4NQ20T | MEM2310X | HM60N20 | IXFH12N100P
Keywords - MTP4N45 MOSFET datasheet
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History: 2SJ238 | PA610DTF | AP3A010MT | PHK4NQ20T | MEM2310X | HM60N20 | IXFH12N100P



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