July 2000FDC6327CDual N & P-Channel 2.5V Specified PowerTrenchTM MOSFETFeaturesGeneral DescriptionThese N & P-Channel 2.5V specified MOSFETs are N-Channel 2.7A, 20V. RDS(on) = 0.08 @ VGS = 4.5Vproduced using Fairchild Semiconductor's advancedRDS(on) = 0.12 @ VGS = 2.5VPowerTrench process that has been especially tailoredto minimize on-state resistance and yet mainta

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and oth

FDC6327Cwww.VBsemi.twN- and P-Channel 2 V (D-S) MOSFET0 FEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.024 at VGS = 10 V 5.5 TrenchFET Power MOSFETN-Channel 200.036 at VGS = 4.5 V 4.2 100 % Rg Tested0.069 at VGS = - 10 V - 3.4 Compliant to RoHS Directive 2002/95/ECP-Channel - 200.083 at V

March 1999 FDC6323LIntegrated Load Switch General Description FeaturesVDROP=0.2V @ VIN=5V, IL=1A, VON/OFF= 1.5V to 8VThese Integrated Load Switches are produced usingVDROP=0.3V @ VIN=3.3V, IL=1A, VON/OFF= 1.5V to 8V.Fairchild's proprietary, high cell density, DMOStechnology. This very high density process isHigh density cell design for extremely low on-resistance.especially

October 1997 FDC6320C Dual N & P Channel , Digital FET General Description FeaturesThese dual N & P Channel logic level enhancement mode fieldN-Ch 25 V, 0.22 A, RDS(ON) = 5 @ VGS= 2.7 V.effec transistors are produced using Fairchild's proprietary,high cell density, DMOS technology. This very high density P-Ch 25 V, -0.12 A, RDS(ON) = 13 @ VGS= -2.7 V.process is especial

April 1999 FDC6321C Dual N & P Channel , Digital FET General Description FeaturesThese dual N & P Channel logic level enhancement modeN-Ch 25 V, 0.68 A, RDS(ON) = 0.45 @ VGS= 4.5 Vfield effect transistors are produced using Fairchild'sproprietary, high cell density, DMOS technology. This very P-Ch -25 V, -0.46 A, RDS(ON) = 1.1 @ VGS= -4.5 V.high density process is especi

November 1998 FDC6329LIntegrated Load Switch General Description FeaturesThis device is particularly suited for compact powerVDROP=0.2V @ VIN=5V, IL=2.8A. R(ON) = 0.07 VDROP=0.2Vmanagement in portable electronic equipment where@ VIN=2.5V, IL=1.9A. R(ON) = 0.105.2.5V to 8V input and 2.5A output current capability areneeded. This load switch integrates a small N-Channel

March 1999 FDC6324LIntegrated Load Switch General Description FeaturesThese Integrated Load Switches are produced using Fairchild's VDROP=0.2V @ VIN=12V, IL=1A, VON/OFF=1.5 to 8V proprietary, high cell density, DMOS technology. This very highVDROP=0.3V @ VIN=5V, IL=1A, VON/OFF=1.5 to 8V.density process is especially tailored to minimize on-stateHigh density cell design for extr

FDC6321CDual N & P Channel , Digital FET FeaturesN-Ch 25 V, 0.68 A, RDS(ON) = 0.45 @ VGS= 4.5 VGeneral DescriptionP-Ch -25 V, -0.46 A, RDS(ON) = 1.1 @ VGS= -4.5 V.These dual N & P Channel logic level enhancement mode Very low level gate drive requirements allowing directfield effect transistors are produced using ON operation in 3 V circuits. VGS(th)

FDC6321Cwww.VBsemi.twN- and P-Channel 2 V (D-S) MOSFET0 FEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.024 at VGS = 10 V 5.5 TrenchFET Power MOSFETN-Channel 200.036 at VGS = 4.5 V 4.2 100 % Rg Tested0.069 at VGS = - 10 V - 3.4 Compliant to RoHS Directive 2002/95/ECP-Channel - 200.083 at V