Справочник MOSFET. FDG6322C

 

FDG6322C MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDG6322C
   Тип транзистора: MOSFET
   Полярность: NP
   Pdⓘ - Максимальная рассеиваемая мощность: 0.3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 25 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.22 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 0.29 nC
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 4 Ohm
   Тип корпуса: SC70

 Аналог (замена) для FDG6322C

 

 

FDG6322C Datasheet (PDF)

 ..1. Size:669K  fairchild semi
 fdg6322c.pdf

FDG6322C FDG6322C

June 2008 FDG6322C Dual N & P Channel Digital FET General Description FeaturesThese dual N & P-Channel logic level enhancement modeN-Ch 0.22 A, 25 V, RDS(ON) = 4.0 @ VGS= 4.5 V,field effect transistors are produced using Fairchild'sRDS(ON) = 5.0 @ VGS= 2.7 V.proprietary, high cell density, DMOS technology. This veryhigh density process is especially tailored to minimiz

 ..2. Size:250K  onsemi
 fdg6322c.pdf

FDG6322C FDG6322C

FDG6322C Features Dual N & P Channel Digital FETN-Ch 0.22 A, 25 V, RDS(ON) = 4.0 @ VGS= 4.5 V,RDS(ON) = 5.0 @ VGS= 2.7 V. General DescriptionP-Ch -0.41 A,-25V, RDS(ON) = 1.1 @ VGS= -4.5V,These dual N & P-Channel logic level enhancement mode RDS(ON) = 1.5 @ VGS= -2.7V.field effect transistors are produced using ON Semiconductor's proprietary, high cell densit

 8.1. Size:72K  fairchild semi
 fdg6321c.pdf

FDG6322C FDG6322C

November 1998 FDG6321C Dual N & P Channel Digital FET General Description FeaturesThese dual N & P-Channel logic level enhancement mode fieldN-Ch 0.50 A, 25 V, RDS(ON) = 0.45 @ VGS= 4.5V.effect transistors are produced using Fairchild's proprietary,RDS(ON) = 0.60 @ VGS= 2.7 V.high cell density, DMOS technology. This very high densityprocess is especially tailored to mi

 8.2. Size:73K  fairchild semi
 fdg6320c.pdf

FDG6322C FDG6322C

November 1998 FDG6320C Dual N & P Channel Digital FET General Description FeaturesThese dual N & P-Channel logic level enhancement modeN-Ch 0.22 A, 25 V, RDS(ON) = 4.0 @ VGS= 4.5 V,field effect transistors are produced using Fairchild'sRDS(ON) = 5.0 @ VGS= 2.7 V.proprietary, high cell density, DMOS technology. This veryhigh density process is especially tailored to mi

 8.3. Size:291K  onsemi
 fdg6321c.pdf

FDG6322C FDG6322C

Digital FET, Dual N & PChannelFDG6321CGeneral DescriptionThese dual N & P-Channel logic level enhancement mode fieldwww.onsemi.comeffect transistors are produced using ON Semiconductors proprietary,high cell density, DMOS technology. This very high density process isS2especially tailored to minimize on-state resistance. This device hasG2D1been designed especially on l

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