FDG6322C Datasheet. Specs and Replacement

Type Designator: FDG6322C  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.22 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm

Package: SC70

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FDG6322C datasheet

 ..1. Size:669K  fairchild semi
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FDG6322C

June 2008 FDG6322C Dual N & P Channel Digital FET General Description Features These dual N & P-Channel logic level enhancement mode N-Ch 0.22 A, 25 V, RDS(ON) = 4.0 @ VGS= 4.5 V, field effect transistors are produced using Fairchild's RDS(ON) = 5.0 @ VGS= 2.7 V. proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimiz... See More ⇒

 ..2. Size:250K  onsemi
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FDG6322C

FDG6322C Features Dual N & P Channel Digital FET N-Ch 0.22 A, 25 V, RDS(ON) = 4.0 @ VGS= 4.5 V, RDS(ON) = 5.0 @ VGS= 2.7 V. General Description P-Ch -0.41 A,-25V, RDS(ON) = 1.1 @ VGS= -4.5V, These dual N & P-Channel logic level enhancement mode RDS(ON) = 1.5 @ VGS= -2.7V. field effect transistors are produced using ON Semiconductor's proprietary, high cell densit... See More ⇒

 8.1. Size:72K  fairchild semi
 fdg6321c.pdf pdf_icon

FDG6322C

November 1998 FDG6321C Dual N & P Channel Digital FET General Description Features These dual N & P-Channel logic level enhancement mode field N-Ch 0.50 A, 25 V, RDS(ON) = 0.45 @ VGS= 4.5V. effect transistors are produced using Fairchild's proprietary, RDS(ON) = 0.60 @ VGS= 2.7 V. high cell density, DMOS technology. This very high density process is especially tailored to mi... See More ⇒

 8.2. Size:73K  fairchild semi
 fdg6320c.pdf pdf_icon

FDG6322C

November 1998 FDG6320C Dual N & P Channel Digital FET General Description Features These dual N & P-Channel logic level enhancement mode N-Ch 0.22 A, 25 V, RDS(ON) = 4.0 @ VGS= 4.5 V, field effect transistors are produced using Fairchild's RDS(ON) = 5.0 @ VGS= 2.7 V. proprietary, high cell density, DMOS technology. This very high density process is especially tailored to mi... See More ⇒

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Detailed specifications: FDG6316P, FDG6317NZ, FDG6318P, FDG6318PZ, FDG6320C, STS4501, FDG6321C, STS4300, 8N65, STS400, FDG6332C, STS3623, FDG6332CF085, STS3621, FDG6335N, FDG8842CZ, STS3620

Keywords - FDG6322C MOSFET specs

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