April 2009tmFDMA291PSingle P-Channel 1.8V Specified PowerTrench MOSFETGeneral Description FeaturesThis device is designed specifically for battery charge 6.6 A, 20V. rDS(ON) = 42 m @ VGS = 4.5V or load switching in cellular handset and other ultra- rDS(ON) = 58 m @ VGS = 2.5V portable applications. It features a MOSFET with low rDS(ON) = 98 m @ VGS =

May 20 0ttmtmtmFDMA2002NZDual N-Channel PowerTrench MOSFETGeneral Description Features 2.9 A, 30 V RDS(ON) = 123 m @ VGS = 4.5 V This device is designed specifically as a single package RDS(ON) = 140 m @ VGS = 3.0 V solution for dual switching requirements in cellular RDS(ON) = 163 m @ VGS = 2.5 V handset and other ultra-portable applications. It fea

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur