FDMA291P Specs and Replacement
Type Designator: FDMA291P
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 6.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
Package: MICROFET
FDMA291P substitution
- MOSFET ⓘ Cross-Reference Search
FDMA291P datasheet
fdma2002nz.pdf
May 20 0 t tm tm tm FDMA2002NZ Dual N-Channel PowerTrench MOSFET General Description Features 2.9 A, 30 V RDS(ON) = 123 m @ VGS = 4.5 V This device is designed specifically as a single package RDS(ON) = 140 m @ VGS = 3.0 V solution for dual switching requirements in cellular RDS(ON) = 163 m @ VGS = 2.5 V handset and other ultra-portable applications. It fea... See More ⇒
fdma2002nz.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
Detailed specifications: FDMA1027P , FDMA1027PT , FDMA1028NZ , FDMA1029PZ , FDMA1032CZ , STS3404 , FDMA2002NZ , STS3402 , IRF4905 , FDMA3023PZ , FDMA3028N , STS3401A , FDMA410NZ , FDMA420NZ , FDMA430NZ , STS3401 , FDMA507PZ .
Keywords - FDMA291P MOSFET specs
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