HM8N20KA - Даташиты. Аналоги. Основные параметры
Наименование производителя: HM8N20KA
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 55 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 8 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 11 ns
Cossⓘ - Выходная емкость: 90 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.3 Ohm
Тип корпуса: TO252
Аналог (замена) для HM8N20KA
HM8N20KA Datasheet (PDF)
hm8n20ka.pdf

HM8N20KAN-Channel Enhancement Mode Power MOSFET Description The HM8N20KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =8A RDS(ON)
hm8n20k.pdf

HM8N20KN-Channel Enhancement Mode Power MOSFET Description The HM8N20K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =8A RDS(ON)
hm8n20a.pdf

HM8N20AN-Channel Enhancement Mode Power MOSFET Description The HM8N20A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =8A RDS(ON)
hm8n20i.pdf

N-Channel Enhancement Mode Power MOSFET Description The HM8N20I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =8A RDS(ON)
Другие MOSFET... HM85P02D , HM85P02K , HM8810A , HM8810S , HM8N20 , HM8N20A , HM8N20I , HM8N20K , IRFP064N , HM8N25K , HM8P02MR , HM90N04D , HM90N06D , HM9435 , HM9435A , HM9435B , HM9436 .
History: NVMFD5852NL | FDB0170N607L | FDB0190N807L | NVJS3151P
History: NVMFD5852NL | FDB0170N607L | FDB0190N807L | NVJS3151P



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