HM8N20KA Datasheet and Replacement
Type Designator: HM8N20KA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 55 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 90 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: TO252
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HM8N20KA Datasheet (PDF)
hm8n20ka.pdf

HM8N20KAN-Channel Enhancement Mode Power MOSFET Description The HM8N20KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =8A RDS(ON)
hm8n20k.pdf

HM8N20KN-Channel Enhancement Mode Power MOSFET Description The HM8N20K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =8A RDS(ON)
hm8n20a.pdf

HM8N20AN-Channel Enhancement Mode Power MOSFET Description The HM8N20A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =8A RDS(ON)
hm8n20i.pdf

N-Channel Enhancement Mode Power MOSFET Description The HM8N20I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =8A RDS(ON)
Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
History: NCEP01T13A | GSM4946W | NCE1216 | 10N65KG-TM3-T | CS7N65FA9D | 12N25 | BSP92P
Keywords - HM8N20KA MOSFET datasheet
HM8N20KA cross reference
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History: NCEP01T13A | GSM4946W | NCE1216 | 10N65KG-TM3-T | CS7N65FA9D | 12N25 | BSP92P



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