All MOSFET. HM8N20KA Datasheet

 

HM8N20KA MOSFET. Datasheet pdf. Equivalent


   Type Designator: HM8N20KA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 55 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO252

 HM8N20KA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HM8N20KA Datasheet (PDF)

 ..1. Size:908K  cn hmsemi
 hm8n20ka.pdf

HM8N20KA HM8N20KA

HM8N20KAN-Channel Enhancement Mode Power MOSFET Description The HM8N20KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =8A RDS(ON)

 7.1. Size:701K  cn hmsemi
 hm8n20k.pdf

HM8N20KA HM8N20KA

HM8N20KN-Channel Enhancement Mode Power MOSFET Description The HM8N20K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =8A RDS(ON)

 8.1. Size:626K  cn hmsemi
 hm8n20a.pdf

HM8N20KA HM8N20KA

HM8N20AN-Channel Enhancement Mode Power MOSFET Description The HM8N20A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =8A RDS(ON)

 8.2. Size:559K  cn hmsemi
 hm8n20i.pdf

HM8N20KA HM8N20KA

N-Channel Enhancement Mode Power MOSFET Description The HM8N20I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =8A RDS(ON)

 8.3. Size:611K  cn hmsemi
 hm8n20.pdf

HM8N20KA HM8N20KA

HM8N20N-Channel Enhancement Mode Power MOSFET Description The HM8N20 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =8A RDS(ON)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top