Справочник MOSFET. NCE3401BY

 

NCE3401BY MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NCE3401BY
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 1.3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1.2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 4.4 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 7.3 nC
   trⓘ - Время нарастания: 3.5 ns
   Cossⓘ - Выходная емкость: 90.3 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.055 Ohm
   Тип корпуса: SOT-23

 Аналог (замена) для NCE3401BY

 

 

NCE3401BY Datasheet (PDF)

 ..1. Size:265K  ncepower
 nce3401by.pdf

NCE3401BY NCE3401BY

http://www.ncepower.com NCE3401BYNCE P-Channel Enhancement Mode Power MOSFET Description DThe NCE3401BY uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram General Features VDS = -30V,ID = -4.4A RD

 7.1. Size:249K  1
 nce3401ay.pdf

NCE3401BY NCE3401BY

Pb Free Producthttp://www.ncepower.com NCE3401AYNCE P-Channel Enhancement Mode Power MOSFET Description DThe NCE3401AY uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SGeneral Features Schematic diagram VDS = -30

 7.2. Size:248K  ncepower
 nce3401a.pdf

NCE3401BY NCE3401BY

Pb Free Producthttp://www.ncepower.com NCE3401ANCE P-Channel Enhancement Mode Power MOSFET Description The NCE3401A uses advanced trench technology to provide Dexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Gload switch or in PWM applications. SGeneral Features VDS = -30V,ID = -4.4A Schematic

 7.3. Size:241K  ncepower
 nce3401.pdf

NCE3401BY NCE3401BY

Pb Free Producthttp://www.ncepower.com NCE3401NCE P-Channel Enhancement Mode Power MOSFET Description DThe NCE3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram General Features VDS = -30V,ID

 7.4. Size:243K  ncepower
 nce3401y.pdf

NCE3401BY NCE3401BY

Pb Free Producthttp://www.ncepower.com NCE3401YNCE P-Channel Enhancement Mode Power MOSFET DDescription The NCE3401Y uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram General Features VDS = -30V,

 7.5. Size:267K  ncepower
 nce3401ay.pdf

NCE3401BY NCE3401BY

http://www.ncepower.com NCE3401AYNCE P-Channel Enhancement Mode Power MOSFET Description DThe NCE3401AY uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram General Features VDS = -30V,ID = -4.4A RD

 7.6. Size:615K  ncepower
 nce3401e.pdf

NCE3401BY NCE3401BY

Pb Free Producthttp://www.ncepower.comNCE3401ENCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE3401E uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as 2.5V. This device is suitable for use as aload switch or in PWM applications.It is ESD protested.General Features V = -30V,I = -4.4ADS D

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History: 2SK3481-S | FRS430R

 

 
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