NCE3401BY Datasheet. Specs and Replacement

Type Designator: NCE3401BY  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 4.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.5 nS

Cossⓘ - Output Capacitance: 90.3 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm

Package: SOT-23

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NCE3401BY datasheet

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NCE3401BY

http //www.ncepower.com NCE3401BY NCE P-Channel Enhancement Mode Power MOSFET Description D The NCE3401BY uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram General Features VDS = -30V,ID = -4.4A RD... See More ⇒

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 nce3401ay.pdf pdf_icon

NCE3401BY

Pb Free Product http //www.ncepower.com NCE3401AY NCE P-Channel Enhancement Mode Power MOSFET Description D The NCE3401AY uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S General Features Schematic diagram VDS = -30... See More ⇒

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 nce3401a.pdf pdf_icon

NCE3401BY

Pb Free Product http //www.ncepower.com NCE3401A NCE P-Channel Enhancement Mode Power MOSFET Description The NCE3401A uses advanced trench technology to provide D excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G load switch or in PWM applications. S General Features VDS = -30V,ID = -4.4A Schematic... See More ⇒

 7.3. Size:241K  ncepower
 nce3401.pdf pdf_icon

NCE3401BY

Pb Free Product http //www.ncepower.com NCE3401 NCE P-Channel Enhancement Mode Power MOSFET Description D The NCE3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram General Features VDS = -30V,ID... See More ⇒

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Detailed specifications: NCE30P55K, NCE30P55L, NCE30P60G, NCE30P85K, NCE3134, NCE3400E, NCE3400XY, NCE3401A, CS150N04A8, NCE3401E, NCE3401Y, NCE3402, NCE3402A, NCE3406AN, NCE3407A, NCE3407E, NCE3415E

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