NCE3401BY PDF and Equivalents Search

 

NCE3401BY Specs and Replacement


   Type Designator: NCE3401BY
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 4.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 3.5 nS
   Cossⓘ - Output Capacitance: 90.3 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: SOT-23
 

 NCE3401BY substitution

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NCE3401BY datasheet

 ..1. Size:265K  ncepower
nce3401by.pdf pdf_icon

NCE3401BY

http //www.ncepower.com NCE3401BY NCE P-Channel Enhancement Mode Power MOSFET Description D The NCE3401BY uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram General Features VDS = -30V,ID = -4.4A RD... See More ⇒

 7.1. Size:249K  1
nce3401ay.pdf pdf_icon

NCE3401BY

Pb Free Product http //www.ncepower.com NCE3401AY NCE P-Channel Enhancement Mode Power MOSFET Description D The NCE3401AY uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S General Features Schematic diagram VDS = -30... See More ⇒

 7.2. Size:248K  ncepower
nce3401a.pdf pdf_icon

NCE3401BY

Pb Free Product http //www.ncepower.com NCE3401A NCE P-Channel Enhancement Mode Power MOSFET Description The NCE3401A uses advanced trench technology to provide D excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G load switch or in PWM applications. S General Features VDS = -30V,ID = -4.4A Schematic... See More ⇒

 7.3. Size:241K  ncepower
nce3401.pdf pdf_icon

NCE3401BY

Pb Free Product http //www.ncepower.com NCE3401 NCE P-Channel Enhancement Mode Power MOSFET Description D The NCE3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram General Features VDS = -30V,ID... See More ⇒

Detailed specifications: NCE30P55K , NCE30P55L , NCE30P60G , NCE30P85K , NCE3134 , NCE3400E , NCE3400XY , NCE3401A , BS170 , NCE3401E , NCE3401Y , NCE3402 , NCE3402A , NCE3406AN , NCE3407A , NCE3407E , NCE3415E .

Keywords - NCE3401BY MOSFET specs

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