AOTS26108 - параметры транзистора MOSFET, его аналоги, datasheet

AOTS26108 Datasheet (PDF)

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AOTS2610830V/20V Complementary MOSFETGeneral Description Product Summary Trench Power MOSFET technology N-Channel P-Channel Low RDS(ON)VDS= 30V -20V Low Gate Charge ID= 3.8A (VGS=10V) -4.5A (VGS=-4.5V) RoHS and Halogen-Free Compliant RDS(ON) RDS(ON)

9.1. Size:611K aosemi
aots21115c.pdf pdf_icon

AOTS21115C20V P-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology -20V Low RDS(ON) ID (at VGS=-4.5V) -6.6A Low Gate Charge RDS(ON) (at VGS=-4.5V)

9.2. Size:363K aosemi
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AOTS21313C30V P-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology -30V Low RDS(ON) ID (at VGS=-10V) -7.3A Low Gate Charge RDS(ON) (at VGS=-10V)

9.3. Size:375K aosemi
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AOTS21311C30V P-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology -30V Low RDS(ON) ID (at VGS=-10V) -5.9A Low Gate Charge RDS(ON) (at VGS=-10V)