All MOSFET. AOTS26108 Datasheet

 

AOTS26108 Datasheet and Replacement


   Type Designator: AOTS26108
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: TSOP-6L
 

 AOTS26108 substitution

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AOTS26108 Datasheet (PDF)

 ..1. Size:535K  aosemi
 aots26108.pdf pdf_icon

AOTS26108

AOTS2610830V/20V Complementary MOSFETGeneral Description Product Summary Trench Power MOSFET technology N-Channel P-Channel Low RDS(ON)VDS= 30V -20V Low Gate Charge ID= 3.8A (VGS=10V) -4.5A (VGS=-4.5V) RoHS and Halogen-Free Compliant RDS(ON) RDS(ON)

 9.1. Size:611K  aosemi
 aots21115c.pdf pdf_icon

AOTS26108

AOTS21115C20V P-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology -20V Low RDS(ON) ID (at VGS=-4.5V) -6.6A Low Gate Charge RDS(ON) (at VGS=-4.5V)

 9.2. Size:363K  aosemi
 aots21313c.pdf pdf_icon

AOTS26108

AOTS21313C30V P-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology -30V Low RDS(ON) ID (at VGS=-10V) -7.3A Low Gate Charge RDS(ON) (at VGS=-10V)

 9.3. Size:375K  aosemi
 aots21311c.pdf pdf_icon

AOTS26108

AOTS21311C30V P-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology -30V Low RDS(ON) ID (at VGS=-10V) -5.9A Low Gate Charge RDS(ON) (at VGS=-10V)

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Datasheet: AOTL66912Q , AOTL66914 , AOTL66915 , AOTL66918 , AOTS21115C , AOTS21311C , AOTS21313C , AOTS21319C , IRF530 , AOTS32334C , AOTS32338C , AOTE21115C , AOTE32136C , AOUS66414 , AOUS66416 , AOUS66616 , AOUS66620 .

History: FDD7N25LZTM | 2SK1323

Keywords - AOTS26108 MOSFET datasheet

 AOTS26108 cross reference
 AOTS26108 equivalent finder
 AOTS26108 lookup
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