AOTS26108 Datasheet. Specs and Replacement

Type Designator: AOTS26108  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 30 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: TSOP-6L

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AOTS26108 datasheet

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aots26108.pdf pdf_icon

AOTS26108

AOTS26108 30V/20V Complementary MOSFET General Description Product Summary Trench Power MOSFET technology N-Channel P-Channel Low RDS(ON) VDS= 30V -20V Low Gate Charge ID= 3.8A (VGS=10V) -4.5A (VGS=-4.5V) RoHS and Halogen-Free Compliant RDS(ON) RDS(ON) ... See More ⇒

 9.1. Size:611K  aosemi
aots21115c.pdf pdf_icon

AOTS26108

AOTS21115C 20V P-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology -20V Low RDS(ON) ID (at VGS=-4.5V) -6.6A Low Gate Charge RDS(ON) (at VGS=-4.5V) ... See More ⇒

 9.2. Size:363K  aosemi
aots21313c.pdf pdf_icon

AOTS26108

AOTS21313C 30V P-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology -30V Low RDS(ON) ID (at VGS=-10V) -7.3A Low Gate Charge RDS(ON) (at VGS=-10V) ... See More ⇒

 9.3. Size:375K  aosemi
aots21311c.pdf pdf_icon

AOTS26108

AOTS21311C 30V P-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology -30V Low RDS(ON) ID (at VGS=-10V) -5.9A Low Gate Charge RDS(ON) (at VGS=-10V) ... See More ⇒

Detailed specifications: AOTL66912Q, AOTL66914, AOTL66915, AOTL66918, AOTS21115C, AOTS21311C, AOTS21313C, AOTS21319C, IRFB3607, AOTS32334C, AOTS32338C, AOTE21115C, AOTE32136C, AOUS66414, AOUS66416, AOUS66616, AOUS66620

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