AOTS26108 Datasheet and Replacement
Type Designator: AOTS26108
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 30 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: TSOP-6L
AOTS26108 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AOTS26108 Datasheet (PDF)
aots26108.pdf
AOTS2610830V/20V Complementary MOSFETGeneral Description Product Summary Trench Power MOSFET technology N-Channel P-Channel Low RDS(ON)VDS= 30V -20V Low Gate Charge ID= 3.8A (VGS=10V) -4.5A (VGS=-4.5V) RoHS and Halogen-Free Compliant RDS(ON) RDS(ON)
aots21115c.pdf
AOTS21115C20V P-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology -20V Low RDS(ON) ID (at VGS=-4.5V) -6.6A Low Gate Charge RDS(ON) (at VGS=-4.5V)
aots21313c.pdf
AOTS21313C30V P-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology -30V Low RDS(ON) ID (at VGS=-10V) -7.3A Low Gate Charge RDS(ON) (at VGS=-10V)
aots21311c.pdf
AOTS21311C30V P-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology -30V Low RDS(ON) ID (at VGS=-10V) -5.9A Low Gate Charge RDS(ON) (at VGS=-10V)
Datasheet: AOTL66912Q , AOTL66914 , AOTL66915 , AOTL66918 , AOTS21115C , AOTS21311C , AOTS21313C , AOTS21319C , IRF1010E , AOTS32334C , AOTS32338C , AOTE21115C , AOTE32136C , AOUS66414 , AOUS66416 , AOUS66616 , AOUS66620 .
Keywords - AOTS26108 MOSFET datasheet
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