AOTS26108 Datasheet. Specs and Replacement
Type Designator: AOTS26108 📄📄
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 30 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: TSOP-6L
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AOTS26108 substitution
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AOTS26108 datasheet
aots26108.pdf
AOTS26108 30V/20V Complementary MOSFET General Description Product Summary Trench Power MOSFET technology N-Channel P-Channel Low RDS(ON) VDS= 30V -20V Low Gate Charge ID= 3.8A (VGS=10V) -4.5A (VGS=-4.5V) RoHS and Halogen-Free Compliant RDS(ON) RDS(ON) ... See More ⇒
aots21115c.pdf
AOTS21115C 20V P-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology -20V Low RDS(ON) ID (at VGS=-4.5V) -6.6A Low Gate Charge RDS(ON) (at VGS=-4.5V) ... See More ⇒
aots21313c.pdf
AOTS21313C 30V P-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology -30V Low RDS(ON) ID (at VGS=-10V) -7.3A Low Gate Charge RDS(ON) (at VGS=-10V) ... See More ⇒
aots21311c.pdf
AOTS21311C 30V P-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology -30V Low RDS(ON) ID (at VGS=-10V) -5.9A Low Gate Charge RDS(ON) (at VGS=-10V) ... See More ⇒
Detailed specifications: AOTL66912Q, AOTL66914, AOTL66915, AOTL66918, AOTS21115C, AOTS21311C, AOTS21313C, AOTS21319C, IRFB3607, AOTS32334C, AOTS32338C, AOTE21115C, AOTE32136C, AOUS66414, AOUS66416, AOUS66616, AOUS66620
Keywords - AOTS26108 MOSFET specs
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