FQU2N90TUAM002 - аналоги, параметры транзистора

FQU2N90TUAM002 даташит

5.1. Size:841K fairchild semi
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January 2009 QFET FQD2N90 / FQU2N90 900V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 1.7A, 900V, RDS(on) = 7.2 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 5.5 pF) This advanced technology has been especi

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January 2014 FQD2N90 / FQU2N90 N-Channel QFET MOSFET 900 V, 1.7 A, 7.2 Description Features This N-Channel enhancement mode power MOSFET is 1.7 A, 900 V, RDS(on) = 7.2 (Max.) @ VGS = 10 V, produced using Fairchild Semiconductor s proprietary ID = 0.85 A planar stripe and DMOS technology. This advanced Low Gate Charge (Typ. 12 nC) MOSFET technology has been especiall

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FQD2N90 / FQU2N90 N-Channel QFET MOSFET 900 V, 1.7 A, 7.2 Features 1.7 A, 900 V, RDS(on) = 7.2 (Max.) @ VGS = 10 V, ID = 0.85 A Description Low Gate Charge (Typ. 12 nC) This N-Channel enhancement mode power MOSFET is Low Crss (Typ. 5.5 pF) produced using ON Semiconductor s proprietary 100% Avalanche Tested planar stripe and DMOS technology. This advanced

Другие MOSFET... FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 , 10N60 , FQU3N50C , FQU4N50TUWS , FQU5N40 , FDMC7582 , FQU5N60C , FDMQ8403 , FQU5P20 , FQU8P10 .