FQU2N90TUAM002 MOSFET. Datasheet pdf. Equivalent
Type Designator: FQU2N90TUAM002
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 1.7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 12 nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 7.2 Ohm
Package: TO251 IPAK
FQU2N90TUAM002 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQU2N90TUAM002 Datasheet (PDF)
fqd2n90tf fqd2n90tm fqd2n90 fqu2n90 fqu2n90tu.pdf
January 2009QFETFQD2N90 / FQU2N90900V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 1.7A, 900V, RDS(on) = 7.2 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 5.5 pF)This advanced technology has been especi
fqu2n90.pdf
January 2014FQD2N90 / FQU2N90N-Channel QFET MOSFET900 V, 1.7 A, 7.2 Description FeaturesThis N-Channel enhancement mode power MOSFET is 1.7 A, 900 V, RDS(on) = 7.2 (Max.) @ VGS = 10 V,produced using Fairchild Semiconductors proprietary ID = 0.85 Aplanar stripe and DMOS technology. This advanced Low Gate Charge (Typ. 12 nC)MOSFET technology has been especiall
fqd2n90 fqu2n90.pdf
FQD2N90 / FQU2N90N-Channel QFET MOSFET900 V, 1.7 A, 7.2 Features 1.7 A, 900 V, RDS(on) = 7.2 (Max.) @ VGS = 10 V,ID = 0.85 ADescription Low Gate Charge (Typ. 12 nC)This N-Channel enhancement mode power MOSFET is Low Crss (Typ. 5.5 pF)produced using ON Semiconductors proprietary 100% Avalanche Testedplanar stripe and DMOS technology. This advanced
Datasheet: FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 , AON6414A , FQU3N50C , FQU4N50TUWS , FQU5N40 , FDMC7582 , FQU5N60C , FDMQ8403 , FQU5P20 , FQU8P10 .
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