JMTC085P04A - Даташиты. Аналоги. Основные параметры

JMTC085P04ADescriptionJMT P-channel Enhancement Mode Power MOSFETFeatures Application V = -40V, I = -70A PWM ApplicationsDS DR

30V, 190A, 2.8m N-channel Power Trench MOSFETJMTC018N03AProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS 30 V 100% Vds TestedVGS(th)_Typ 1.5 V Halogen-free; RoHS-compliantID(@VGS=10V) 190 ARDS(ON)_Typ(@VGS=10V 2.2 mWApplicationsRDS(ON)_Typ(@VGS=4.5V 2.8 mW Load Switch PWM Application

60V, 120A, 4.2m N-channel Power Trench MOSFETJMTC060N06AProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 3.0 V Halogen-free; RoHS-compliantID(@VGS=10V) 120 ARDS(ON)_Typ(@VGS=10V 4.2 mWApplications Load Switch PWM Application Power ManagementDG S

40V, 150A, 3.4m N-channel Power Trench MOSFETJMTC035N04AProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 40 V 100% Vds TestedVGS(th)_Typ 2.8 V Halogen-free; RoHS-compliantID(@VGS=10V) 150 ARDS(ON)_Typ(@VGS=10V 3.4 mWApplications Load Switch PWM Application Power ManagementDG S

JMTC035N06DDescriptionJMT N-channel Enhancement Mode Power MOSFETFeatures Application 60V, 180A Load SwitchR

40V, 190A, 2.1m N-channel Power Trench MOSFETJMTC025N04DProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS 40 V 100% Vds TestedVGS(th)_Typ 2.7 V Halogen-free; RoHS-compliantID(@VGS=10V) 190 ARDS(ON)_Typ(@VGS=10V 2.1 mWApplications Load Switch PWM Application Power ManagementDG ST

70V, 84A, 6.1m N-channel Power Trench MOSFETJMTC068N07AProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS 70 V 100% Vds TestedVGS(th)_Typ 3.0 V Halogen-free; RoHS-compliantID(@VGS=10V) 84 A Pb-free platingRDS(ON)_Typ(@VGS=10V 6.1 mWRDS(ON)_Typ(@VGS=8.0V 6.6 mWApplications Load Switch P