2SB942 - Даташиты. Аналоги. Основные параметры

Power Transistors 2SB942, 2SB942A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1267 and 2SD1267A Unit mm Features 10.0 0.2 4.2 0.2 High forward current transfer ratio hFE which has satisfactory linearity 5.5 0.2 2.7 0.2 Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink

JMnic Product Specification Silicon PNP Power Transistors 2SB942 2SB942A DESCRIPTION With TO-220Fa package High forward current transfer ratio hFE which has satisfactory linearity Low collector saturation voltage Complement to type 2SD1267/1267A APPLICATIONS For low-frequency power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outl

isc Silicon PNP Power Transistor 2SB942 DESCRIPTION Low Collector Saturation Voltage- V = -1.5V(Max)@I = -4A CE(sat) C Good Linearity of h FE Complement to Type 2SD1267 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low-frequency power amplifications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB942 2SB942A DESCRIPTION With TO-220Fa package High forward current transfer ratio hFE which has satisfactory linearity Low collector saturation voltage Complement to type 2SD1267/1267A APPLICATIONS For low-frequency power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB942 2SB942A DESCRIPTION With TO-220Fa package High forward current transfer ratio hFE which has satisfactory linearity Low collector saturation voltage Complement to type 2SD1267/1267A APPLICATIONS For low-frequency power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.

Power Transistors 2SB944 Silicon PNP epitaxial planar type For power switching Unit mm Complementary to 2SD1269 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features Low collector to emitter saturation voltage VCE(sat) 3.1 0.1 Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package which can be installed to the heat sink with one

Power Transistors 2SB945 Silicon PNP epitaxial planar type For power switching Unit mm Complementary to 2SD1270 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features Low collector to emitter saturation voltage VCE(sat) 3.1 0.1 Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package which can be installed to the heat sink with one

Power Transistors 2SB0947 (2SB947), 2SB0947A (2SB947A) Silicon PNP epitaxial planar type For low-voltage switcing Unit mm Features 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Low collector-emitter saturation voltage VCE(sat) High-speed switching Full-pack package which can be installed to the heat sink with one screw 3.1 0.1 Absolute Maximum Ratings TC = 25 C Par

Power Transistors 2SB943 Silicon PNP epitaxial planar type For power switching Unit mm Complementary to 2SD1268 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features Low collector to emitter saturation voltage VCE(sat) 3.1 0.1 Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package which can be installed to the heat sink with one

Power Transistors 2SB948, 2SB948A Silicon PNP epitaxial planar type For low-voltage switching Unit mm Complementary to 2SD1445 and 2SD1445A 10.0 0.2 4.2 0.2 Features 5.5 0.2 2.7 0.2 Low collector to emitter saturation voltage VCE(sat) High-speed switching 3.1 0.1 Full-pack package which can be installed to the heat sink with one screw Absolute Maximum Ratings (TC=25

Power Transistors 2SB946 Silicon PNP epitaxial planar type For power switching Unit mm Complementary to 2SD1271 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features Low collector to emitter saturation voltage VCE(sat) 3.1 0.1 Satisfactory linearity of foward current transfer ratio hFE Large collector current IC 0Full-pack package which can be installed to the heat sink with one

Power Transistors 2SB941, 2SB941A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1266 and 2SD1266A Unit mm Features 10.0 0.2 4.2 0.2 High forward current transfer ratio hFE which has satisfactory linearity 5.5 0.2 2.7 0.2 Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink

Power Transistors 2SB949, 2SB949A Silicon PNP epitaxial planar type Darlington For power amplification and switching Unit mm 10.0 0.2 4.2 0.2 Complementary to 2SD1275 and 2SD1275A 5.5 0.2 2.7 0.2 Features High foward current transfer ratio hFE 3.1 0.1 High-speed switching Full-pack package which can be installed to the heat sink with one screw 1.3 0.2 1.4 0.1

Power Transistors 2SB940, 2B940A Silicon PNP epitaxial planar type For power amplification Unit mm For TV vertical deflection output 10.0 0.2 4.2 0.2 Complementary to 2SD1264 and 2SD1264A 5.5 0.2 2.7 0.2 Features High collector to emitter voltage VCEO 3.1 0.1 Large collector power dissipation PC Full-pack package which can be installed to the heat sink with one screw

JMnic Product Specification Silicon PNP Power Transistors 2SB944 DESCRIPTION With TO-220Fa package Large collector current IC Low collector saturation voltage Complement to type 2SD1269 APPLICATIONS For power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximum ratings(Ta=

JMnic Product Specification Silicon PNP Power Transistors 2SB941 2SB941A DESCRIPTION With TO-220Fa package Low collector saturation voltage Complementary to type 2SD1266/1266A APPLICATIONS For low-frequency power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) S

JMnic Product Specification Silicon PNP Power Transistors 2SB945 DESCRIPTION With TO-220Fa package Large collector current IC Low collector saturation voltage Complement to type 2SD1270 APPLICATIONS For power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximum ratings(Ta=2

JMnic Product Specification Silicon PNP Power Transistors 2SB947 2SB947A DESCRIPTION With TO-220Fa package High speed switching Low collector saturation voltage APPLICATIONS For low-voltage switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2SB947 -40 VCBO Col

JMnic Product Specification Silicon PNP Power Transistors 2SB940,2SB940A DESCRIPTION With TO-220Fa package Complement to type 2SD1264/1264A High collector to emitter voltage VCEO Large collector power dissipation PC APPLICATIONS For power amplification For TV vertical deflection output PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum

JMnic Product Specification Silicon PNP Power Transistors 2SB943 DESCRIPTION With TO-220Fa package Large collector current IC Low collector saturation voltage Complement to type 2SD1268 APPLICATIONS For power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximum ratings(Ta=

JMnic Product Specification Silicon PNP Power Transistors 2SB948 2SB948A DESCRIPTION With TO-220Fa package Complement to type 2SD1445/1445A High speed switching Low collector saturation voltage APPLICATIONS For low-voltage switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITI

JMnic Product Specification Silicon PNP Power Transistors 2SB946 DESCRIPTION With TO-220Fa package Complement to type 2SD1271 Low saturation voltage Good linearity of hFE High current APPLICATIONS For power switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UN

ST 2SB9435U PNP Silicon Epitaxial Power Transistor Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 45 V Collector Emitter Voltage -VCEO 30 V Emitter Base Voltage -VEBO 6 V Collector Current -IC 3 A Peak Collector Current -ICM 5 A Base Current -IB 1 A 1) Total Power Dissipation at Ta = 25 Ptot 0.72 W Total Power Dissipation at Tc =

2SB941(3CA941) PNP /SILICON PNP TRANSISTOR ./Purpose For low-frequency power amplification. HFE - TO-220 /Feature High forward current transfer ratio Hfe which has satisfactory linearity,low collector to emi

isc Silicon PNP Power Transistor 2SB944 DESCRIPTION Low Collector Saturation Voltage V = -0.5V(Max)@ I = -3A CE(sat) C Collector-Emitter Breakdown Voltage- V = -80V (Min) (BR)CEO Good Linearity of h FE Complement to Type 2SD1269 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplification. ABSOLUT

isc Silicon PNP Power Transistor 2SB945 DESCRIPTION Low Collector Saturation Voltage- V = -0.5V(Max)@I = -4A CE(sat) C Good Linearity of h FE Large Collector Current I C Complement to Type 2SD1270 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications ABSOLUTE MAXIMUM RATINGS(T =25 )

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB940,2SB940A DESCRIPTION With TO-220Fa package Complement to type 2SD1264/1264A High collector to emitter voltage VCEO Large collector power dissipation PC APPLICATIONS For power amplification For TV vertical deflection output PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base

isc Silicon PNP Power Transistor 2SB947 DESCRIPTION Low Collector Saturation Voltage- V = -0.6V(Max)@I = -7A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low-voltage switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB940,2SB940A DESCRIPTION With TO-220Fa package Complement to type 2SD1264/1264A High collector to emitter voltage VCEO Large collector power dissipation PC APPLICATIONS For power amplification For TV vertical deflection output PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base

isc Silicon PNP Power Transistor 2SB943 DESCRIPTION Low Collector Saturation Voltage- V = -0.5V(Max)@I = -2A CE(sat) C Good Linearity of h FE Complement to Type 2SD1268 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI

isc Silicon PNP Power Transistor 2SB948 DESCRIPTION Low Collector Saturation Voltage- V = -0.6V(Max)@I = -10A CE(sat) C High Speed Switching Complement to Type 2SD1445 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low-voltage switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB941 2SB941A DESCRIPTION With TO-220Fa package Low collector saturation voltage Complementary to type 2SD1266/1266A APPLICATIONS For low-frequency power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximum rati

isc Silicon PNP Power Transistor 2SB946 DESCRIPTION Low Collector Saturation Voltage- V = -0.5V(Max)@I = -5A CE(sat) C Good Linearity of h FE Large Collector Current I C Complement to Type 2SD1271 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications ABSOLUTE MAXIMUM RATINGS(T =25 )

isc Silicon PNP Power Transistor 2SB941 DESCRIPTION Low Collector Saturation Voltage- V = -1.2V(Max)@I = -3A CE(sat) C Good Linearity of h FE Complement to Type 2SD1266 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low-frequency power amplifications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL