2SB942 Datasheet and Replacement

Power Transistors2SB942, 2SB942ASilicon PNP epitaxial planar typeFor low-frequency power amplificationComplementary to 2SD1267 and 2SD1267AUnit: mmFeatures10.0 0.2 4.2 0.2High forward current transfer ratio hFE which has satisfactory linearity5.5 0.2 2.7 0.2Low collector to emitter saturation voltage VCE(sat)Full-pack package which can be installed to the heat sink

JMnic Product Specification Silicon PNP Power Transistors 2SB942 2SB942A DESCRIPTION With TO-220Fa package High forward current transfer ratio hFE which has satisfactory linearity Low collector saturation voltage Complement to type 2SD1267/1267A APPLICATIONS For low-frequency power amplification PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outl

isc Silicon PNP Power Transistor 2SB942DESCRIPTIONLow Collector Saturation Voltage-: V = -1.5V(Max)@I = -4ACE(sat) CGood Linearity of hFEComplement to Type 2SD1267Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low-frequency power amplifications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB942 2SB942A DESCRIPTION With TO-220Fa package High forward current transfer ratio hFE which has satisfactory linearity Low collector saturation voltage Complement to type 2SD1267/1267A APPLICATIONS For low-frequency power amplification PINNING PIN DESCRIPTION1 Base 2 CollectorFig.

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB942 2SB942A DESCRIPTION With TO-220Fa package High forward current transfer ratio hFE which has satisfactory linearity Low collector saturation voltage Complement to type 2SD1267/1267A APPLICATIONS For low-frequency power amplification PINNING PIN DESCRIPTION1 Base 2 CollectorFig.

Power Transistors2SB944Silicon PNP epitaxial planar typeFor power switchingUnit: mmComplementary to 2SD126910.0 0.2 4.2 0.25.5 0.2 2.7 0.2FeaturesLow collector to emitter saturation voltage VCE(sat) 3.1 0.1Satisfactory linearity of foward current transfer ratio hFELarge collector current ICFull-pack package which can be installed to the heat sink withone

Power Transistors2SB945Silicon PNP epitaxial planar typeFor power switchingUnit: mmComplementary to 2SD127010.0 0.2 4.2 0.25.5 0.2 2.7 0.2FeaturesLow collector to emitter saturation voltage VCE(sat) 3.1 0.1Satisfactory linearity of foward current transfer ratio hFELarge collector current ICFull-pack package which can be installed to the heat sink withone

Power Transistors2SB0947 (2SB947), 2SB0947A (2SB947A)Silicon PNP epitaxial planar typeFor low-voltage switcingUnit: mm Features10.00.2 4.20.25.50.2 2.70.2 Low collector-emitter saturation voltage VCE(sat) High-speed switching Full-pack package which can be installed to the heat sink with one screw 3.10.1 Absolute Maximum Ratings TC = 25CPar

Power Transistors2SB943Silicon PNP epitaxial planar typeFor power switchingUnit: mmComplementary to 2SD126810.0 0.2 4.2 0.25.5 0.2 2.7 0.2FeaturesLow collector to emitter saturation voltage VCE(sat) 3.1 0.1Satisfactory linearity of foward current transfer ratio hFELarge collector current ICFull-pack package which can be installed to the heat sink withone

Power Transistors2SB948, 2SB948ASilicon PNP epitaxial planar typeFor low-voltage switchingUnit: mmComplementary to 2SD1445 and 2SD1445A10.0 0.2 4.2 0.2Features5.5 0.2 2.7 0.2Low collector to emitter saturation voltage VCE(sat)High-speed switching 3.1 0.1Full-pack package which can be installed to the heat sink withone screwAbsolute Maximum Ratings (TC=25

Power Transistors2SB946Silicon PNP epitaxial planar typeFor power switchingUnit: mmComplementary to 2SD127110.0 0.2 4.2 0.25.5 0.2 2.7 0.2FeaturesLow collector to emitter saturation voltage VCE(sat) 3.1 0.1Satisfactory linearity of foward current transfer ratio hFELarge collector current IC0Full-pack package which can be installed to the heat sink withone

Power Transistors2SB941, 2SB941ASilicon PNP epitaxial planar typeFor low-frequency power amplificationComplementary to 2SD1266 and 2SD1266AUnit: mmFeatures10.0 0.2 4.2 0.2High forward current transfer ratio hFE which has satisfactory linearity5.5 0.2 2.7 0.2Low collector to emitter saturation voltage VCE(sat)Full-pack package which can be installed to the heat sink

Power Transistors2SB949, 2SB949ASilicon PNP epitaxial planar type DarlingtonFor power amplification and switchingUnit: mm10.0 0.2 4.2 0.2Complementary to 2SD1275 and 2SD1275A5.5 0.2 2.7 0.2Features High foward current transfer ratio hFE 3.1 0.1 High-speed switching Full-pack package which can be installed to the heat sink withone screw1.3 0.21.4 0.1

Power Transistors2SB940, 2B940ASilicon PNP epitaxial planar typeFor power amplificationUnit: mmFor TV vertical deflection output10.0 0.2 4.2 0.2Complementary to 2SD1264 and 2SD1264A5.5 0.2 2.7 0.2FeaturesHigh collector to emitter voltage VCEO 3.1 0.1Large collector power dissipation PCFull-pack package which can be installed to the heat sink withone screw

JMnic Product Specification Silicon PNP Power Transistors 2SB944 DESCRIPTION With TO-220Fa package Large collector current IC Low collector saturation voltage Complement to type 2SD1269 APPLICATIONS For power switching applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol 3 EmitterAbsolute maximum ratings(Ta=

JMnic Product Specification Silicon PNP Power Transistors 2SB941 2SB941A DESCRIPTION With TO-220Fa package Low collector saturation voltage Complementary to type 2SD1266/1266A APPLICATIONS For low-frequency power amplification PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol3 EmitterAbsolute maximum ratings(Ta=25) S

JMnic Product Specification Silicon PNP Power Transistors 2SB945 DESCRIPTION With TO-220Fa package Large collector current IC Low collector saturation voltage Complement to type 2SD1270 APPLICATIONS For power switching applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol3 EmitterAbsolute maximum ratings(Ta=2

JMnic Product Specification Silicon PNP Power Transistors 2SB947 2SB947A DESCRIPTION With TO-220Fa package High speed switching Low collector saturation voltage APPLICATIONS For low-voltage switching applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT2SB947 -40 VCBO Col

JMnic Product Specification Silicon PNP Power Transistors 2SB940,2SB940A DESCRIPTION With TO-220Fa package Complement to type 2SD1264/1264A High collector to emitter voltage VCEO Large collector power dissipation PC APPLICATIONS For power amplification For TV vertical deflection output PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum

JMnic Product Specification Silicon PNP Power Transistors 2SB943 DESCRIPTION With TO-220Fa package Large collector current IC Low collector saturation voltage Complement to type 2SD1268 APPLICATIONS For power switching applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol 3 EmitterAbsolute maximum ratings(Ta=

JMnic Product Specification Silicon PNP Power Transistors 2SB948 2SB948A DESCRIPTION With TO-220Fa package Complement to type 2SD1445/1445A High speed switching Low collector saturation voltage APPLICATIONS For low-voltage switching applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITI

JMnic Product Specification Silicon PNP Power Transistors 2SB946 DESCRIPTION With TO-220Fa package Complement to type 2SD1271 Low saturation voltage Good linearity of hFE High current APPLICATIONS For power switching applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UN

ST 2SB9435U PNP Silicon Epitaxial Power Transistor Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 45 VCollector Emitter Voltage -VCEO 30 VEmitter Base Voltage -VEBO 6 VCollector Current -IC 3 APeak Collector Current -ICM 5 ABase Current -IB 1 A1)Total Power Dissipation at Ta = 25 Ptot 0.72 WTotal Power Dissipation at Tc =

2SB941(3CA941) PNP /SILICON PNP TRANSISTOR :./Purpose: For low-frequency power amplification.: HFE - TO-220 /Feature: High forward current transfer ratio Hfe which has satisfactory linearity,low collector to emi

isc Silicon PNP Power Transistor 2SB944DESCRIPTIONLow Collector Saturation Voltage: V = -0.5V(Max)@ I = -3ACE(sat) CCollector-Emitter Breakdown Voltage-: V = -80V (Min)(BR)CEOGood Linearity of hFEComplement to Type 2SD1269Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplification.ABSOLUT

isc Silicon PNP Power Transistor 2SB946ADESCRIPTIONLow Collector Saturation Voltage-: V = -0.5V(Max)@I = -5ACE(sat) CGood Linearity of hFELarge Collector Current ICComplement to Type 2SD1271AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applicationsABSOLUTE MAXIMUM RATINGS(T =25

isc Silicon PNP Power Transistor 2SB945DESCRIPTIONLow Collector Saturation Voltage-: V = -0.5V(Max)@I = -4ACE(sat) CGood Linearity of hFELarge Collector Current ICComplement to Type 2SD1270Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB940,2SB940A DESCRIPTION With TO-220Fa package Complement to type 2SD1264/1264A High collector to emitter voltage VCEO Large collector power dissipation PC APPLICATIONS For power amplification For TV vertical deflection output PINNING PIN DESCRIPTION1 Emitter 2 Collector3 Base

isc Silicon PNP Power Transistor 2SB947DESCRIPTIONLow Collector Saturation Voltage-: V = -0.6V(Max)@I = -7ACE(sat) CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low-voltage switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB940,2SB940A DESCRIPTION With TO-220Fa package Complement to type 2SD1264/1264A High collector to emitter voltage VCEO Large collector power dissipation PC APPLICATIONS For power amplification For TV vertical deflection output PINNING PIN DESCRIPTION1 Emitter 2 Collector3 Base

isc Silicon PNP Power Transistor 2SB943DESCRIPTIONLow Collector Saturation Voltage-: V = -0.5V(Max)@I = -2ACE(sat) CGood Linearity of hFEComplement to Type 2SD1268Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI

isc Silicon PNP Power Transistor 2SB948DESCRIPTIONLow Collector Saturation Voltage-: V = -0.6V(Max)@I = -10ACE(sat) CHigh Speed SwitchingComplement to Type 2SD1445Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low-voltage switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB941 2SB941A DESCRIPTION With TO-220Fa package Low collector saturation voltage Complementary to type 2SD1266/1266A APPLICATIONS For low-frequency power amplification PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol3 EmitterAbsolute maximum rati

isc Silicon PNP Power Transistor 2SB946DESCRIPTIONLow Collector Saturation Voltage-: V = -0.5V(Max)@I = -5ACE(sat) CGood Linearity of hFELarge Collector Current ICComplement to Type 2SD1271Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)

isc Silicon PNP Power Transistor 2SB941DESCRIPTIONLow Collector Saturation Voltage-: V = -1.2V(Max)@I = -3ACE(sat) CGood Linearity of hFEComplement to Type 2SD1266Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low-frequency power amplifications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL