Справочник транзисторов. 2SC1400F

 

Биполярный транзистор 2SC1400F - описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2SC1400F

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 0.25 W

Макcимально допустимое напряжение коллектор-база (Ucb): 100 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V

Макcимальный постоянный ток коллектора (Ic): 0.1 A

Предельная температура PN-перехода (Tj): 180 °C

Граничная частота коэффициента передачи тока (ft): 50 MHz

Ёмкость коллекторного перехода (Cc): 7 pf

Статический коэффициент передачи тока (hfe): 255

Корпус транзистора: TO92

Аналоги (замена) для 2SC1400F

 

 

2SC1400F Datasheet (PDF)

4.1. 2sc1402.pdf Size:104K _savantic

2SC1400F
2SC1400F

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1402 DESCRIPTION ·With TO-3 package ·Wide area of safe operation APPLICATIONS ·For audio frequency power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDI

5.1. 2sc1473 e.pdf Size:51K _panasonic

2SC1400F
2SC1400F

Transistor 2SC1473, 2SC1473A Silicon NPN triple diffusion planer type For general amplification Unit: mm 2SC1473 complementary to 2SA1018 5.0± 0.2 4.0± 0.2 2SC1473A complementary to 2SA1767 Features High collector to emitter voltage VCEO. High transition frequency fT. Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 –0.1 0.45 –0.1 Collector t

5.2. 2sc1473.pdf Size:47K _panasonic

2SC1400F
2SC1400F

Transistor 2SC1473, 2SC1473A Silicon NPN triple diffusion planer type For general amplification Unit: mm 2SC1473 complementary to 2SA1018 5.0± 0.2 4.0± 0.2 2SC1473A complementary to 2SA1767 Features High collector to emitter voltage VCEO. High transition frequency fT. Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 –0.1 0.45 –0.1 Collector t

 5.3. 2sc1472.pdf Size:47K _hitachi

2SC1400F
2SC1400F

2SC1472(K) Silicon NPN Epitaxial, Darlington Application High gain amplifier Outline TO-92 (1) 3 2 1. Emitter 1 2. Collector 3. Base 3 2 1 2SC1472 (K) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 40 V Collector to emitter voltage VCEO 30 V Emitter to base voltage VEBO 10 V Collector current IC 300 mA Collector peak current

5.4. 2sc1475.pdf Size:126K _no

2SC1400F
2SC1400F



 5.5. 2sc1426.pdf Size:340K _no

2SC1400F
2SC1400F



5.6. 2sc1413a.pdf Size:30K _wingshing

2SC1400F

NPN TRIPLE DIFFUSED 2SC1413A PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS(No Damper Diode) TO-3 High Collector-Base Voltage(VCBO=1500V) High Speed Switching ABSOLUTE MAXIMUM RATINGS (Ta=25°C C) C C Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 800 V Emitter-Base voltage VEBO 6 V Collector Current

5.7. 2sc1454.pdf Size:66K _wingshing

2SC1400F

2SC1454 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-3 ABSOLUTE MAXIMUM RATINGS (T =25℃ ℃) ℃ ℃ A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 300 V Collector-Emitter Voltage VCEO 250 V Emitter-Base voltage VEBO 7 V Collector Current (DC) IC 40 A Collector Dissipation (Tc=25℃ PC 50 W ℃ ℃ ℃ Junction Temperature Tj 150

Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 431 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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