All Transistors. 2SC1400F Datasheet

 

2SC1400F Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SC1400F

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.25 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 180 °C

Transition Frequency (ft): 50 MHz

Collector Capacitance (Cc): 7 pF

Forward Current Transfer Ratio (hFE), MIN: 255

Noise Figure, dB: -

Package: TO92

2SC1400F Transistor Equivalent Substitute - Cross-Reference Search

 

2SC1400F Datasheet (PDF)

8.1. 2sc1402.pdf Size:104K _savantic

2SC1400F
2SC1400F

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1402 DESCRIPTION ·With TO-3 package ·Wide area of safe operation APPLICATIONS ·For audio frequency power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDI

9.1. 2sc1473 e.pdf Size:51K _panasonic

2SC1400F
2SC1400F

Transistor 2SC1473, 2SC1473A Silicon NPN triple diffusion planer type For general amplification Unit: mm 2SC1473 complementary to 2SA1018 5.0± 0.2 4.0± 0.2 2SC1473A complementary to 2SA1767 Features High collector to emitter voltage VCEO. High transition frequency fT. Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 –0.1 0.45 –0.1 Collector t

9.2. 2sc1473.pdf Size:47K _panasonic

2SC1400F
2SC1400F

Transistor 2SC1473, 2SC1473A Silicon NPN triple diffusion planer type For general amplification Unit: mm 2SC1473 complementary to 2SA1018 5.0± 0.2 4.0± 0.2 2SC1473A complementary to 2SA1767 Features High collector to emitter voltage VCEO. High transition frequency fT. Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 –0.1 0.45 –0.1 Collector t

 9.3. 2sc1472.pdf Size:47K _hitachi

2SC1400F
2SC1400F

2SC1472(K) Silicon NPN Epitaxial, Darlington Application High gain amplifier Outline TO-92 (1) 3 2 1. Emitter 1 2. Collector 3. Base 3 2 1 2SC1472 (K) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 40 V Collector to emitter voltage VCEO 30 V Emitter to base voltage VEBO 10 V Collector current IC 300 mA Collector peak current

9.4. 2sc1475.pdf Size:126K _no

2SC1400F
2SC1400F



 9.5. 2sc1426.pdf Size:340K _no

2SC1400F
2SC1400F



9.6. 2sc1413a.pdf Size:30K _wingshing

2SC1400F

NPN TRIPLE DIFFUSED 2SC1413A PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS(No Damper Diode) TO-3 High Collector-Base Voltage(VCBO=1500V) High Speed Switching ABSOLUTE MAXIMUM RATINGS (Ta=25°C C) C C Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 800 V Emitter-Base voltage VEBO 6 V Collector Current

9.7. 2sc1454.pdf Size:66K _wingshing

2SC1400F

2SC1454 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-3 ABSOLUTE MAXIMUM RATINGS (T =25℃ ℃) ℃ ℃ A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 300 V Collector-Emitter Voltage VCEO 250 V Emitter-Base voltage VEBO 7 V Collector Current (DC) IC 40 A Collector Dissipation (Tc=25℃ PC 50 W ℃ ℃ ℃ Junction Temperature Tj 150

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 431 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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