Биполярный транзистор 2SC1986 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC1986
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 40 W
Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 6 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 40
Корпус транзистора: TO220
2SC1986 Datasheet (PDF)
2sc1986.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1986DESCRIPTIONSilicon NPN tripe diffused mesaCollector-Emitter Breakdown Voltage-:V = 80(V)(Min.)(BR)CEO100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSGeneral and industrial purposeABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER
2sc1985 2sc1986.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1985 2SC1986 DESCRIPTION With TO-220 package Complement to type 2SA770/771 Low collector saturation voltage APPLICATIONS For general and industrial purpose applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Ta=25
2sc1980.pdf
Transistor2SC1980Silicon NPN epitaxial planer typeFor high breakdown voltage low-noise amplificationUnit: mmComplementary to 2SA9215.0 0.2 4.0 0.2FeaturesHigh collector to emitter voltage VCEO.Low noise voltage NV.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 120 V +0.2 +0.20.45 0.1 0.45 0.1Collector to emitt
2sc1980 e.pdf
Transistor2SC1980Silicon NPN epitaxial planer typeFor high breakdown voltage low-noise amplificationUnit: mmComplementary to 2SA9215.0 0.2 4.0 0.2FeaturesHigh collector to emitter voltage VCEO.Low noise voltage NV.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 120 V +0.2 +0.20.45 0.1 0.45 0.1Collector to emitt
2sc1983.pdf
2SC1983 NPN SILICON DARLINGTON TRANSISTORSWITCHING REGULATORS PWM INVERTERSSOLENOID AND RELAY DRIVERSSC-65ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 60 V Collector Current (DC) IC 3 A Collector Dissipation (Tc=25 PC 30 W Junction Temperature Tj 150
2sc1985.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1985DESCRIPTIONSilicon NPN tripe diffused mesaCollector-Emitter Breakdown Voltage-:V = 60(V)(Min.)(BR)CEO100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSGeneral and industrial purposeABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER
Другие транзисторы... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
History: BUL416
