2SC2716Y - аналоги, параметры транзистора - Справочник транзисторов

2SC2716Y даташит

7.1. Size:333K toshiba
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2SC2716 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2716 High Frequency Amplifier Applications Unit mm AM High Frequency Amplifier Applications AM Frequency Converter Applications Low noise figure NF = 3.5dB (max) (f = 1 MHz) Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 35 V Collector-emitter v

7.2. Size:1123K kexin
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SMD Type Transistors NPN Transistors 2SC2716 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=100mA 1 2 Collector Emitter Voltage VCEO=30V +0.1 0.95-0.1 0.1+0.05 -0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 35 Collect

7.3. Size:216K inchange semiconductor
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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2716 DESCRIPTION High Power Gain- Gp 12dB,f= 27MHz, PO= 16W High Reliability APPLICATIONS Designed for RF power amplifier applications. ABSOLUTE MAXIMUM RATINGS (Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 30 V VEBO Emit

Другие транзисторы: 2SC2714Y, 2SC2715, 2SC2715O, 2SC2715R, 2SC2715Y, 2SC2716, 2SC2716O, 2SC2716R, D667, 2SC2717, 2SC2718, 2SC2719, 2SC272, 2SC2720, 2SC2721, 2SC2722, 2SC2723