2SC2716Y Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC2716Y
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 80 MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: TO236
2SC2716Y Transistor Equivalent Substitute - Cross-Reference Search
2SC2716Y Datasheet (PDF)
2sc2716.pdf
2SC2716 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2716 High Frequency Amplifier Applications Unit: mm AM High Frequency Amplifier Applications AM Frequency Converter Applications Low noise figure: NF = 3.5dB (max) (f = 1 MHz) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 35 VCollector-emitter v
2sc2716.pdf
SMD Type TransistorsNPN Transistors2SC2716SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=100mA1 2 Collector Emitter Voltage VCEO=30V+0.10.95-0.1 0.1+0.05-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 35 Collect
2sc2716.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2716 DESCRIPTION High Power Gain- : Gp12dB,f= 27MHz, PO= 16W High Reliability APPLICATIONS Designed for RF power amplifier applications. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 30 V VEBO Emit
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
