INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3229DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator, lighting inverter andgeneral purpose applications.ABSOLUTE MAX

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3220 DESCRIPTION With TO-247 package Switching power transistor High breakdown voltage PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-247) and symbol 3 EmitterAbsolute maximum ratings(Tc=25) SYMBOL PARAMETER CONDITIONS VALUE U

isc Silicon NPN Power Transistor 2SC3223DESCRIPTIONLow Collector Saturation Voltage-: V = 1.0V(Max.)@I = 10ACE(sat) CHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power supply and general purpose poweramplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U