2SC3229 - Даташиты. Аналоги. Основные параметры

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3229 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 300V(Min) (BR)CEO High Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator, lighting inverter and general purpose applications. ABSOLUTE MAX

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3220 DESCRIPTION With TO-247 package Switching power transistor High breakdown voltage PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-247) and symbol 3 Emitter Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE U

isc Silicon NPN Power Transistor 2SC3223 DESCRIPTION Low Collector Saturation Voltage- V = 1.0V(Max.)@I = 10A CE(sat) C High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power supply and general purpose power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U