2SC3229 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC3229
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 5 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 95 MHz
Forward Current Transfer Ratio (hFE), MIN: 45
Noise Figure, dB: -
Package: TO202
2SC3229 Transistor Equivalent Substitute - Cross-Reference Search
2SC3229 Datasheet (PDF)
2sc3229.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3229DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator, lighting inverter andgeneral purpose applications.ABSOLUTE MAX
2sc2937 2sc3224 2sc3262 2sc3261 2sc3259 2sc2507 2sc2506 2sc2829 2sc2827 2sc2826.pdf
2sc3220.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3220 DESCRIPTION With TO-247 package Switching power transistor High breakdown voltage PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-247) and symbol 3 EmitterAbsolute maximum ratings(Tc=25) SYMBOL PARAMETER CONDITIONS VALUE U
2sc3223.pdf
isc Silicon NPN Power Transistor 2SC3223DESCRIPTIONLow Collector Saturation Voltage-: V = 1.0V(Max.)@I = 10ACE(sat) CHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power supply and general purpose poweramplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
