2SC3545 - Даташиты. Аналоги. Основные параметры

DATA SHEET DATA SHEET SILICON TRANSISTOR 2SC3545 UHF OSCILLATOR AND MIXER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD DESCRIPTION The 2SC3545 is an NPN silicon epitaxial transistor intended for use as PACKAGE DIMENSIONS (Units mm) UHF oscillator and mixer in a tuner of a TV receiver. The device features stable oscillation and small frequency drift against 2.8 0.2 any change of th

NPN SILICON NE944 OSCILLATOR AND MIXER TRANSISTOR SERIES DESCRIPTION FEATURES The NE944 series of NPN silicon epitaxial bipolar transistors LOW COST is intended for use in general purpose UHF oscillator and HIGH GAIN BANDWIDTH PRODUCT mixer applications. It is suitable for automotive keyless entry fT = 2000 MHz TYP and TV tuner designs. LOW COLLECTOR TO BASE TIME CONSTAN

SMD Type Transistors NPN Transistors 2SC3545 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=50mA 1 2 Collector Emitter Voltage VCEO=15V +0.1 +0.05 0.95-0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collect

INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3545 DESCRIPTION Low Base Time Constant; r = 4 ps TYP. bb CC High Gain Bandwidth Product fT= 2 GHz TYP. @ I = -5mA, V = 10V E CE Low Feedback Capacitance; C = 0.48 pF TYP. re 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for

2SC3547A TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3547A TV Tuner, UHF Oscillator Applications Unit mm (common collector) Transition frequency is high and dependent on current excellently. Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3

2SC3547B TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3547B TV Tuner, UHF Oscillator Applications Unit mm (common collector) Transition frequency is high and dependent on current excellently. Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3

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SMD Type Transistors NPN Transistors 2SC3547A SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=30mA Collector Emitter Voltage VCEO=12V 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collec

isc Silicon NPN Power Transistor 2SC3540 DESCRIPTION Low Collector Saturation Voltage V = 0.4V(Max)@ I = 3A CE(sat) C Complement to Type 2SA1388 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vo

isc Silicon NPN Power Transistors 2SC3549 DESCRIPTION High Voltage High Speed Switching High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators DC-DC converter Solids state relay General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector

INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3544 DESCRIPTION Low Base Time Constant; r = 5 ps TYP. bb CC High Gain Bandwidth Product fT= 2 GHz TYP. @ I = 5mA, V = 10V E CE Low Feedback Capacitance; C = 0.55 pF TYP. re 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for u

INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3547 DESCRIPTION High Current-Gain Bandwidth Product f = 4 GHz TYP. @ V = 10 V,I = 5 mA T CE C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV tuner, UHF oscillator applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER