2SC3545 Datasheet and Replacement

DATA SHEETDATA SHEETSILICON TRANSISTOR2SC3545UHF OSCILLATOR AND MIXERNPN SILICON EPITAXIAL TRANSISTORMINI MOLDDESCRIPTIONThe 2SC3545 is an NPN silicon epitaxial transistor intended for use asPACKAGE DIMENSIONS(Units: mm)UHF oscillator and mixer in a tuner of a TV receiver.The device features stable oscillation and small frequency drift against2.80.2any change of th

NPN SILICON NE944OSCILLATOR AND MIXER TRANSISTOR SERIESDESCRIPTIONFEATURESThe NE944 series of NPN silicon epitaxial bipolar transistors LOW COSTis intended for use in general purpose UHF oscillator and HIGH GAIN BANDWIDTH PRODUCT:mixer applications. It is suitable for automotive keyless entryfT = 2000 MHz TYPand TV tuner designs. LOW COLLECTOR TO BASE TIME CONSTAN

SMD Type TransistorsNPN Transistors2SC3545SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=50mA1 2 Collector Emitter Voltage VCEO=15V+0.1+0.050.95-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collect

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC3545DESCRIPTIONLow Base Time Constant;r = 4 ps TYP.bb CCHigh Gain Bandwidth ProductfT= 2 GHz TYP. @ I = -5mA, V = 10VE CELow Feedback Capacitance;C = 0.48 pF TYP.re100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for

2SC3547A TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3547A TV Tuner, UHF Oscillator Applications Unit: mm (common collector) Transition frequency is high and dependent on current excellently. Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3

2SC3547B TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3547B TV Tuner, UHF Oscillator Applications Unit: mm (common collector) Transition frequency is high and dependent on current excellently. Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

SMD Type TransistorsNPN Transistors2SC3547ASOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=30mA Collector Emitter Voltage VCEO=12V1 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collec

isc Silicon NPN Power Transistor 2SC3540DESCRIPTIONLow Collector Saturation Voltage: V = 0.4V(Max)@ I = 3ACE(sat) CComplement to Type 2SA1388Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vo

isc Silicon NPN Power Transistors 2SC3549DESCRIPTIONHigh VoltageHigh Speed SwitchingHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsDC-DC converterSolids state relayGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC3544DESCRIPTIONLow Base Time Constant;r = 5 ps TYP.bb CCHigh Gain Bandwidth ProductfT= 2 GHz TYP. @ I = 5mA, V = 10VE CELow Feedback Capacitance;C = 0.55 pF TYP.re100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for u

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC3547DESCRIPTIONHigh Current-GainBandwidth Productf = 4 GHz TYP. @ V = 10 V,I = 5 mAT CE C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV tuner, UHF oscillator applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER